a3l90dtxxi AEGIS SEMICONDUTORES LTDA, a3l90dtxxi Datasheet

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a3l90dtxxi

Manufacturer Part Number
a3l90dtxxi
Description
Thyristors
Manufacturer
AEGIS SEMICONDUTORES LTDA
Datasheet
T
T
I
I
I
current
I
I
di/dt Max. Non-repetitive rate-of-
rise current
P
P
voltage
F Mounting Force
MAXIMUM ALLOWABLE RATINGS
F(AV)
F(RMS)
FSM
2
2
+I
-V
J
stg
t Max. I
t
G
G(AV)
1/2
GM
Junction Temperature
M Max. Peak gate power
GM
Storage Temperature
Max. Peak non-rep. surge
Max. I
Max. Peak gate current
Max. Peak negative gate
Max. Av. gate power
Nom. RMS current
2
PARAMETER
t capability
2
SEMICONDUTORES LTDA.
t
1/2
Max. Av. current
@ Max. T
capability
C
VOLTAGE RATINGS
A3L:90TD.02I
A3L:90TD.04I
A3L:90TD.06I
A3L:90TD.08I
A3L:90TD.10I
A3L:90TD.12I
A3L:90TD.14I
A3L:90TD.16I
Part Number
-40 to 125
-40 to 150
VALUE
10.33
13.32
14.52
159.1
1.61
1.75
1.72
1.87
9.48
V
rep. peak reverse voltage
200
150
150
3(5)
90
85
12
3
2
RRM
T
J
= 0 to 125 C
, VR (V)
1000
1200
1400
1600
200
400
600
800
A3L:90DT.XXI
O
UNITS
kA
kA
A/ms
N.m
mA
kA
O
O
W
W
O
A
A
2
V
C
C
C
T
s
2
s
1/2
J
= -40 to 0 C
1000
1200
1330
1520
200
400
600
800
180 half sine wave
50 Hz half cycle sine wave
60 Hz half cycle sine wave
50 Hz half cycle sine wave
60 Hz half cycle sine wave
t = 10ms
t = 8.3 ms
t = 10ms
t = 8.3 ms
Initial T
for time t
T
10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40%
of non-repetitive value.
tp < 5 ms
tp < 5 ms
Upper connectors(Heatsink)
J
Max.
= 125 C, V
O
O
J
= 125 C, no voltage applied after surge.
O
x
V
rep. peak reverse voltage
= I
RSM
2
t
D
O
1/2
, V
= V
T
* t
R
J
DRM
x
= 25 to 125 C
1/2
(V)
. (0.1 < tx < 10ms).
, I
1100
1300
1500
1700
300
500
700
900
TM
Max. non-
= 1600A. Gate pulse: 20V, 20W,
NOTES
O
-
-
-
-
-
Initial T
applied after surge.
Initial T
applied after surge.
Initial T
applied after surge.
Initial T
applied after surge.
J
J
J
J
= 125 C, rated V
= 125 C, no voltage
= 125 C, rated V
= 125 C, no voltage
O
O
O
O
RRM
RRM
2
I
t

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a3l90dtxxi Summary of contents

Page 1

SEMICONDUTORES LTDA. VOLTAGE RATINGS Part Number A3L:90TD.02I A3L:90TD.04I A3L:90TD.06I A3L:90TD.08I A3L:90TD.10I A3L:90TD.12I A3L:90TD.14I A3L:90TD.16I MAXIMUM ALLOWABLE RATINGS PARAMETER T Junction Temperature J T Storage Temperature stg Max. Av. current I F(AV) @ Max Nom. RMS current F(RMS) ...

Page 2

SEMICONDUTORES LTDA. CHARACTERISTICS PARAMETER MIN. V peak on-state voltage --- TM V Threshold voltage --- T(TO) r Slope resistance --- T I Latching current --- L I Holding current --- H t Delay time --- d t Turn-off time --- ...

Page 3

SEMICONDUTORES LTDA. Maximum Average Forward Power Loss 1500 1000 500 100 *Sinusoidal Waveform Average Forward Current (A) Fig.3 -Forward Power Loss Characteristics Forward Voltage Drop 1000 100 125ºC 25ºC 10 0.5 1.0 1.5 2.0 Instantaneous ...

Page 4

SEMICONDUTORES LTDA. TO-240AA Fig Outline Characteristics A3L:90DT.XXI Fig Gate Trigger Characteristics ~ 1 Fig Circuit Layout ...

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