k4t51043qb-gce6 Samsung Semiconductor, Inc., k4t51043qb-gce6 Datasheet - Page 31

• Manufacturer Part Number: k4t51043qb-gce6
• Description: 512mb B-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

512Mb B-die DDR2 SDRAM
Input/Output capacitance
Electrical Characteristics & AC Timing for DDR2-667/533/400
Refresh Parameters by Device Density
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Timing Parameters by Speed Grade
(Refer to notes for informations related to this table at the bottom)
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Refresh to active/Refresh command time
Average periodic refresh interval
Bin (CL - tRCD - tRP)
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tRCD
tRP
tRC
tRAS
Parameter
Speed
(0 °C < T
Parameter
CASE
Parameter
< 95 °C; V
3.75
min
DDR2-667(E6)
15
15
55
40
5
3
Symbol
5 - 5- 5
DDQ
70000
max
8
8
8
= 1.8V + 0.1V; V
min
tRFC
tREFI
DDR2-667
3.75
min
DDR2-533(D5)
15
15
55
40
5
-
85 °C < T
4 - 4 - 4
0 °C ≤ T
max
Symbol
Page 31 of 38
Symbol
CCK
CDCK
CI
CDI
CIO
CDIO
DD
70000
max
CASE
CASE
= 1.8V + 0.1V)
8
8
-
≤ 85°C
≤ 95°C
min
Min
1.0
1.0
2.5
DDR2-533
x
x
x
DDR2-400
DDR2-533
DDR2-400(CC)
min
15
15
55
40
5
5
-
3 - 3 - 3
256Mb
7.8
3.9
Max
0.25
0.25
75
max
2.0
2.0
4.0
0.5
70000
max
8
8
-
512Mb
105
7.8
3.9
Min
1.0
1.0
2.5
x
x
x
DDR2-667
min
Units
DDR2-400
ns
ns
ns
ns
ns
ns
ns
127.5
1Gb
7.8
3.9
Max
0.25
0.25
2.0
2.0
3.5
0.5
Rev. 0.91 (Sep. 2003)
max
DDR2 SDRAM
2Gb
195
7.8
3.9
Preliminary
Units
pF
pF
pF
pF
pF
pF
Units
4Gb
tbd
7.8
3.9
Notes
Units
ns
µs
µs