k4t51043qb-gce6 Samsung Semiconductor, Inc., k4t51043qb-gce6 Datasheet - Page 38
k4t51043qb-gce6
Manufacturer Part Number
k4t51043qb-gce6
Description
512mb B-die Ddr2 Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4T51043QB-GCE6.pdf
(38 pages)
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Preliminary
512Mb B-die DDR2 SDRAM
DDR2 SDRAM
24. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on.
ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND.
25. ODT turn off time min is when the device starts to turn off ODT resistance.
ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD
Rev. 0.91 (Sep. 2003)
Page 38 of 38
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