gs8321e36agd-333v GSI Technology, gs8321e36agd-333v Datasheet - Page 13

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gs8321e36agd-333v

Manufacturer Part Number
gs8321e36agd-333v
Description
2m X 18, 1m X 32, 1m X 36 36mb Sync Burst Srams
Manufacturer
GSI Technology
Datasheet
Operating Temperature
Thermal Impedance
Capacitance
(T
Note:
These parameters are sample tested.
Rev: 1.00a 2/2011
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Note:
* The part numbers of Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
Notes:
1.
2.
3.
V
Note:
Input Under/overshoot voltage must be –2 V > Vi < V
SS
A
Package
165 BGA
– 2.0 V
Undershoot Measurement and Timing
= 25
Thermal Impedance data is based on a number of of samples from mulitple lots and should be viewed as a typical number.
Please refer to JEDEC standard JESD51-6.
The characteristics of the test fixture PCB influence reported thermal characteristics of the device. Be advised that a good thermal path to
the PCB can result in cooling or heating of the RAM depending on PCB temperature.
50%
V
V
SS
IH
(Commercial Range Versions)
o
Input/Output Capacitance
(Industrial Range Versions)*
C, f = 1 MH
Junction Temperature
Junction Temperature
Input Capacitance
Parameter
Parameter
Substrate
Test PCB
4-layer
Z
20% tKC
, V
DD
= 2.5 V)
Airflow = 0 m/s
θ JA (C°/W)
TBD
Symbol
Symbol
C
C
T
T
DDn
I/O
J
J
IN
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Airflow = 1 m/s
13/30
θ JA (C°/W)
TBD
Test conditions
Min.
–40
0
V
V
V
DD
OUT
IN
+ 2.0 V
Overshoot Measurement and Timing
= 0 V
50%
V
= 0 V
Airflow = 2 m/s
V
DD
IL
θ JA (C°/W)
TBD
Typ.
25
25
20% tKC
GS8321E18/32/36AD-xxxV
Typ.
12
8
θ JB (C°/W)
TBD
Max.
100
85
© 2011, GSI Technology
Max.
10
14
Preliminary
θ JC (C°/W)
TBD
Unit
Unit
pF
pF
°C
°C

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