k4r881869m Samsung Semiconductor, Inc., k4r881869m Datasheet - Page 60
k4r881869m
Manufacturer Part Number
k4r881869m
Description
288mbit Rdram 512k X 18 Bit X 2*16 Dependent Banks Direct Rdramtm
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4R881869M.pdf
(64 pages)
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K4R881869M
Center-Bonded uBGA Package
Figure 61 shows the form and dimensions of the recom-
mended package for the center-bonded CSP device class.
10
E1
9
8
7
6
5
4
3
2
1
Figure 61: Center-Bonded uBGA Package
A
B
C
D
E
a. The E,MAX parameter for SO-RIMM applications is 0.94mm.
e1
e2
A
D
E
E1
d
Symbol
F
G
d
H
e1
Ball pitch (x-axis)
Ball pitch (y-axis)
Package body length
Package body width
Package total thickness
Ball height
Ball diameter
J
D
K
L
Page 58
Parameter
M
Table 27 lists the numerical values corresponding to dimen-
sions shown in Figure 61.
Bottom
Table 27: Center-Bonded uBGA Package Dimensions
N
P
R
S
0.80
0.80
10.40
17.40
-
0.20
0.30
Y
Min
U
e2
Preliminary
Direct RDRAM
Rev. 0.9 Jan. 2000
0.80
0.80
10.60
17.60
1.00
0.30
0.40
A
Bottom
E
Max
a
Top
mm
mm
mm
mm
mm
mm
mm
Bottom
Unit
™
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