buk9275 NXP Semiconductors, buk9275 Datasheet - Page 6

• Manufacturer Part Number: buk9275
• Description: Buk9275-100a Trenchmos Tm Logic Level Fet
• Manufacturer: NXP Semiconductors

Table 5:
T
Philips Semiconductors
9397 750 07699
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C
= 25 C
R DSon
function of drain-source voltage; typical values.
of drain current; typical values.
I D
(A)
(m )
70
60
50
40
30
20
10
Characteristics
0
160
140
120
100
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
80
60
40
0
0
V GS (V)= 10
2
10
V GS (V) =
4
…continued
5.0
20
4.0
6
3.0
3.8
30
8
3.2
V DS (V)
I D (A)
Conditions
I
Figure 15
I
V
03na76
S
S
GS
3.4
= 10 A;V
= 20 A; dI
3.6
3.6
5.0
10
= 10 V; V
40
3.4
3.2
3.0
2.8
2.6
2.4
2.2
3.8
4.0
Rev. 02 — 4 January 2001
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
j
a
= 25 C; I
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
R DSon
a
--------------------------- -
R
(m )
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
DSon 25 C
75
70
65
60
55
50
R
3
2
1
0
-60
DSon
3
D
Min
= 13 A
-20
4
5
20
BUK9275-100A
TrenchMOS™ logic level FET
Typ
0.85
63
220
6
60
© Philips Electronics N.V. 2001. All rights reserved.
7
100
8
Max
1.2
140
T
j
(
9
o
03aa29
V GS (V)
C)
03na74
180
10
Unit
V
ns
nC
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