buk7560-100a NXP Semiconductors, buk7560-100a Datasheet - Page 6

• Manufacturer Part Number: buk7560-100a
• Description: Trenchmos Standard Level Fet
• Manufacturer: NXP Semiconductors

Table 5:
T
Philips Semiconductors
9397 750 07807
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C; t
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
I D
R DSon
Characteristics
(A)
80
60
40
20
(m )
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
140
120
100
80
60
40
0
0
p
= 300 s
2
5.5
20
…continued
6
4
V GS (V) =
6.5
40
6
V GS (V) =
9
7
10
60
8
8
14
V DS (V)
10
Conditions
I
Figure 15
I
V
I D (A)
S
S
03nd01
GS
20
03nd02
= 25 A; V
= 20 A; dI
10
= 10 V; V
8.5
7.5
5.5
6.5
4.5
Rev. 01 — 22 February 2001
80
BUK7560-100A; BUK7660-100A
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
j
a
= 25 C; I
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
R DSon
a
--------------------------- -
R
(m )
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
DSon 25 C
70
65
60
55
50
45
40
R
3
2
1
0
-60
DSon
5
D
Min
= 10 A
-20
TrenchMOS™ standard level FET
20
10
Typ
0.85
59
180
60
© Philips Electronics N.V. 2001. All rights reserved.
100
15
V GS (V)
Max
1.2
140
T
j
( o C)
03aa29
03nd00
180
20
Unit
V
ns
nC
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