blf2047l-90 NXP Semiconductors, blf2047l-90 Datasheet - Page 2

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blf2047l-90

Manufacturer Part Number
blf2047l-90
Description
Blf2047l/90 Uhf Power Ldmos Transistor
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead SOT502A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2000 Mar 06
Two-tone, class-AB
V
V
I
T
T
MODE OF OPERATION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
D
stg
j
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (1.8 to 2.0 GHz)
Internal input and output matching for high gain and
efficiency.
Common source class-AB operation for PCN and PCS
applications in the 1800 to 2000 MHz frequency range.
DS
GS
UHF power LDMOS transistor
SYMBOL
h
= 25 C in a common source test circuit.
f
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
1
= 2000; f
(MHz)
2
f
= 2000.1
PARAMETER
CAUTION
V
(V)
2
26
DS
PINNING
handbook, halfpage
PIN
90 (PEP)
1
2
3
(W)
P
Fig.1 Simplified outline SOT502A.
L
Top view
drain
gate
source, connected to flange
>10.5
(dB)
G
p
1
2
DESCRIPTION
MIN.
65
BLF2047L/90
Product specification
>30
(%)
MBK394
3
D
65
12
+150
200
MAX.
15
(dBc)
d
V
V
A
UNIT
im
C
C
25

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