blf2047l-90 NXP Semiconductors, blf2047l-90 Datasheet - Page 4

• Manufacturer Part Number: blf2047l-90
• Description: Blf2047l/90 Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF2047L/90 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
2000 Mar 06
handbook, halfpage
Two-tone, class-AB
MODE OF OPERATION
UHF power LDMOS transistor
V
f
Fig.2
1
DS
= 2000 MHz; f
(dB)
G p
= 26 V; I
15
10
5
0
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
DQ
= 525 mA; T
2
= 2000.1 MHz.
G p
D
40
h
DS
25 C;
f
1
= 26 V; I
= 2000; f
80
P L (PEP) (W)
(MHz)
DQ
2
f
= 2000.1
= 525 mA; P
MCD933
120
50
40
30
20
10
0
(%)
D
L
= 90 W; f = 2000 MHz (single tone).
h
V
= 25 C; R
(V)
26
DS
4
handbook, halfpage
V
(1) I
(2) I
(3) I
Fig.3
DS
(dB)
G p
(mA)
= 26 V; T
th j-h
525
15
10
DQ
DQ
DQ
I
DQ
5
0
= 650 mA.
= 525 mA.
= 400 mA.
(1)
(2)
(3)
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
= 0.81 K/W; unless otherwise specified.
h
90 (PEP)
25 C; f
(W)
P
L
40
1
= 2000 MHz; f
G p
D
>10.5
(dB)
G
p
2
80
BLF2047L/90
= 2000.1 MHz.
(1)
Product specification
P L (PEP) (W)
(2)
>30
(%)
D
MCD928
(3)
120
50
40
30
20
10
0
(dBc)
(%)
d
D
im
25