km29w32000ait Samsung Semiconductor, Inc., km29w32000ait Datasheet
km29w32000ait
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km29w32000ait Summary of contents
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... KM29W32000AT, KM29W32000AIT Document Title Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. 0.1 Data Sheet, 1999 1) Added CE don’ t care mode during the data-loading and reading The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications ...
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... KM29W32000AT, KM29W32000AIT Bit NAND Flash Memory FEATURES Voltage Supply : 2.7V ~ 5.5V Organization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bit Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte - Status Register 528-Byte Page Read Operation - Random Access : 10 s(Max.) - Serial Page Access : 50ns(Min ...
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... KM29W32000AT, KM29W32000AIT Figure 1. FUNCTIONAL BLOCK DIAGRAM Command Figure 2. ARRAY ORGANIZATION 32M : 8K Row 1st half Page Register (=512 Block) (=256 Bytes) 512B Column Page Register I/O 0 1st Cycle A 0 2nd Cycle A 9 3rd Cycle A 17 NOTE : Column Address : Starting Address of the Register. ...
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... KM29W32000AT, KM29W32000AIT PRODUCT INTRODUCTION The KM29W32000A is a 33Mbit(34,603,008 bit) memory organized as 8192 rows by 528 columns. Spare sixteen columns are located from column address of 512 to 527. A 528-byte data register is connected to memory cell arrays accommodating data trans- fer between the I/O buffers and memory during page read and page program operations. The memory array is made cells that are serially connected to form a NAND structure ...
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... KM29W32000AT, KM29W32000AIT PIN DESCRIPTION Command Latch Enable(CLE) The CLE input controls the path activation for commands sent to the command register. When active high, commands are latched into the command register through the I/O ports on the rising edge of the WE signal. Address Latch Enable(ALE) The ALE input controls the path activation for address and input data to the internal address/data register ...
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... V OH Output Low Voltage Level V OL Output Low Current(R/B) I (R/ Symbol BIAS T STG I OS Q+0.3V which, during transitions, may overshoot CONDITIONS = KM29W32000AIT:T A Symbol Min (Recommended operating conditions otherwise noted.) Test Conditions Min tcycle=80ns, CE =0mA - ...
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... During its lifetime of 10 years and/or 1million program/erase cycles,the minimum number of valid blocks are guaranteed though its initial number could be reduced. (Refer to the attached technical notes) 2. The 1st block, which is placed on 00h block address, is guaranteed valid block AC TEST CONDITION (KM29W32000AT KM29W32000AIT:T A Parameter Input Pulse Levels Input Rise and Fall Times ...
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... KM29W32000AT, KM29W32000AIT AC Timing Characteristics for Command / Address / Data Input Parameter CLE Set-up Time CLE Hold Time CE Setup Time CE Hold Time WE Pulse Width ALE Setup Time ALE Hold Time Data Setup Time Data Hold Time Write Cycle Time WE High Hold Time AC Characteristics for Operation ...
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... KM29W32000AT, KM29W32000AIT NAND Flash Technical Notes Invalid Block(s) Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. Typically, an invalid block will contain a single bad bit. The information regarding the invalid block( called as the invalid block informa- tion ...
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... KM29W32000AT, KM29W32000AIT NAND Flash Technical Notes (Continued) Error in write or read operation Over its life time, the additional invalid blocks may occur. Though the tight process control and intensive testing, Samsung minimizes the additional block failure rate, which is projected far below 0.1% up until 1million program/erase cycles. Refer to the qualification report for the actual data ...
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... KM29W32000AT, KM29W32000AIT NAND Flash Technical Notes (Continued) Erase Flow Chart Start Write 60H Write Block Address Write D0H Write 70H SR R Erase Error SR Erase Completed : If erase operation results in an error, map out * the failing block and replace it with another block. ...
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... KM29W32000AT, KM29W32000AIT Pointer Operation of KM29W32000A The KM29W32000A has three read modes to set the destination of the pointer. The pointer is set to "A" area by the "00h" command, to "B" area by the "01" command, and to "C" area by the "50h" command. Table 1 shows the destination of the pointer, and figure 2 shows the block diagram of its operations ...
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... KM29W32000AT, KM29W32000AIT System Interface Using CE don’ t -care. For a easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal 528byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read- ing would provide significant savings in power consumption ...
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... KM29W32000AT, KM29W32000AIT * Command Latch Cycle CLE CE WE ALE I Address Latch Cycle CLE CE WE ALE I CLS CLH ALS ALH Command t CLS ALS FLASH MEMORY t WC ...
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... KM29W32000AT, KM29W32000AIT * Input Data Latch Cycle CLE CE t ALS ALE Sequential Out Cycle after Read R/B NOTES : Transition is measured 200mV from steady state voltage with load DIN 1 DIN 0 (CLE=L, WE=H, ALE=L) ...
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... KM29W32000AT, KM29W32000AIT * Status Read Cycle CLE I READ1 OPERATION (READ ONE PAGE) CLE ALE I/O ~ 00h or 01h Column Address R/B t CLS t CLH t CLS WHR 70H AR2 Dout N Dout N+1 ...
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... KM29W32000AT, KM29W32000AIT READ1 OPERATION (INTERCEPTED BY CE) CLE CE WE ALE RE 00h or 01h I Column Address R/B READ2 OPERATION (READ ONE PAGE) CLE CE WE ALE RE 50H A I R/B M Address AR2 Dout Page(Row) Address Busy ...
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... KM29W32000AT, KM29W32000AIT SEQUENTIAL ROW READ OPERATION CLE CE WE ALE RE 00H I R/B M PAGE PROGRAM OPERATION CLE ALE RE 80H I Sequential Data Column Input Command Address R/B Dout Dout N+1 Busy Din Din ...
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... KM29W32000AT, KM29W32000AIT BLOCK ERASE OPERATION CLE ALE RE I/O ~ 60H Block Address R/B Auto Block Erase Setup Command SUSPEND & RESUME OPERATION DURING BLOCK ERASE CLE CE WE ALE RE Block Address I/O ~ 60H R/B Auto Block Erase Setup Command ...
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... KM29W32000AT, KM29W32000AIT MANUFACTURE & DEVICE ID READ OPERATION CLE CE WE ALE RE I/O ~ 90H 0 7 Read ID Command t REAID 00H Maker Code 20 FLASH MEMORY ECH E3H Device Code ...
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... KM29W32000AT, KM29W32000AIT DEVICE OPERATION PAGE READ Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00H to the command reg- ister along with three address cycles. Once the command is latched, it does not need to be written for the following page read opera- tion ...
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... KM29W32000AT, KM29W32000AIT Figure 4. Read2 Operation CLE CE WE ALE R/B RE 50H Start Add.(3Cycle) I & Don't Care) Figure 5. Sequential Row Read1 Operation R/B I 00H Start Add.(3Cycle) 01H & (SE=L, 00H Command) 1st half array 2nd half array ...
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... KM29W32000AT, KM29W32000AIT Figure 6. Sequential Read2 Operation R/B I 50H Start Add.(3Cycle & Don't Care) PAGE PROGRAM The device is programmed basically on a page basis, but it does allow multiple partial page programming of a byte or consecutive bytes up to 528 single page program cycle. The number of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed ten ...
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... KM29W32000AT, KM29W32000AIT BLOCK ERASE The Erase operation can erase on a block(8K Byte) basis. Block address loading is accomplished in two cycles initiated by an Erase Setup command(60H). Only address A The Erase Confirm command(D0H) following the block address loading initiates the internal erasing process. This two-step sequence of setup followed by execution ensures that memory contents are not accidentally erased due to external noise conditions ...
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... KM29W32000AT, KM29W32000AIT READ STATUS The device contains a Status Register which may be read to find out whether program or erase operation is complete, and whether the program or erase operation completed successfully. After writing 70H command to the command register, a read cycle outputs the contents of the Status Register to the I/O pins on the falling edge RE, whichever occurs last. This two line control allows the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired ...
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... KM29W32000AT, KM29W32000AIT RESET The device offers a reset feature, executed by writing FFH to the command register. When the device is in Busy state during random read, program or erase modes, the reset operation will abort these operation. The contents of memory cells being altered are no longer valid, as the data will be partially programmed or erased. Internal address registers are cleared to "0"s and data registers to " ...
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... KM29W32000AT, KM29W32000AIT READY/BUSY The device has a R/ output that provides a hardware method of indicating the completion of a page program, erase and random B read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg- ister or random read is begin after address loading. It returns to high when the internal controller has finished the operation. The pin is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied ...
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... KM29W32000AT, KM29W32000AIT PACKAGE DIMENSIONS 44(40) LEAD PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(II) 44(40) - TSOP2 - 400F #44(40) #1 18.81 0.741 18.41 0.10 0.725 0.004 0.805 0.35 0.10 0.032 0.014 0.004 #23(21) #22(20) Max. 0.80 0.0315 28 FLASH MEMORY Unit :mm/Inch 0~8 0.25 0.010 TYP 0.50 0.020 +0.10 0.15 -0.05 +0.004 0.006 -0.002 0.10 MAX 0.004 ...