upa1708 Renesas Electronics Corporation., upa1708 Datasheet

upa1708

Manufacturer Part Number

upa1708

Description

Switching N-channel Power Mos Fet Industrial Use

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1708.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Notes 1. V

Remark

DESCRIPTION

designed for DC/DC converters and power management

switch.

FEATURES

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

This product is N-Channel MOS Field Effect Transistor

Low on-resistance

Low C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

PART NUMBER

2. V

3. PW

4. Mounted on ceramic substrate of 1200 mm

G13603EJ2V0DS00 (2nd edition)

May 2001 NS CP(K)

iss

PA1708G

= 18.0 m

= 28.0 m

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

: C

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

iss

= 0 V

10 s, Duty Cycle

= 730 pF (TYP.)

(TYP.) (V

Note3

Note2

Note1

= 25°C)

Power SOP8

N-CHANNEL POWER MOS FET

= 10 V, I

= 4.5 V, I

PACKAGE

Note4

1 %

The mark

= 25°C, All terminals are connected)

INDUSTRIAL USE

= 3.5 A)

D(pulse)

= 3.5 A)

D(DC)

DSS

GSS

DATA SHEET

stg

SWITCHING

shows major revised points.

–55 to + 150

x 1.7mm

±7.0

±25

±28

150

MOS FIELD EFFECT TRANSISTOR

2.0

°C

5.37 MAX.

PACKAGE DRAWINGS (Unit : mm)

0.40

1.27

+0.10

–0.05

0.78 MAX.

0.12 M

EQUIVALENT CIRCUIT

1,2,3

5,6,7,8

Gate

Protection

Diode

0.5 ±0.2

6.0 ±0.3

4.4

PA1708

; Source

; Gate

; Drain

Source

Drain

0.8

Body

Diode

0.10

1998

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upa1708 Summary of contents

Page 1

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES Low on-resistance R = 18.0 m (TYP.) (V DS(on 28.0 m (TYP.) (V DS(on)2 Low 730 ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I = ...

Page 4

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1 0.1 0.01 0.001 10 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 TA = 50˚C 25˚C 10 25˚C 75˚C 125˚C 150˚ Drain Current - ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 -40 - 100 120 140 T - Channel Temperature - ˚C ch CAPACITANCE vs. ...

Page 6

Data Sheet G13603EJ2V0DS PA1708 ...

Page 7

Data Sheet G13603EJ2V0DS PA1708 7 ...

Page 8

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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