upa1750 Renesas Electronics Corporation., upa1750 Datasheet
upa1750
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upa1750 Summary of contents
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ELECTRICAL CHARACTERISTICS (T Characteristics Symbol Drain to Source On-state Resistance R R Gate to Source Cutoff Voltage V Forward Transfer Admittance | y Drain Leakage Current I DSS Gate to Source Leakage Current I GSS Input Capacitance C Output Capacitance ...
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DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA –100 Mounted on ceramic 2 substrate ...
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TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1 0.1 0.01 0.001 10 µ 100 µ FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 V DS Pulsed T = –25 ˚ ˚ ˚C 125 ˚C ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0. – 0.15 0.10 – –1 – 100 150 T - Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN ...
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REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Power MOS FET features and application ...
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PA1750 7 ...
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No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC ...