upa1730g Renesas Electronics Corporation., upa1730g Datasheet

upa1730g

Manufacturer Part Number

upa1730g

Description

Switching P-channel Power Mos Fet Industrial Use

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1730G.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

DESCRIPTION

tor designed for power management applications of

notebook computers and Li-ion battery protection circuit.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Notes 1. PW

The

Low on-resistance

Low C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

2. Mounted on ceramic substrate of 1200 mm

PA1730 is P-Channel MOS Field Effect Transis-

iss

G14284EJ2V0DS00 (2nd edition)

April 2001 NS CP(K)

PA1730G

= 9.5 m

= 13.5 m

= 15.0 m

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

: C

iss

= 3800 pF TYP.

10 s, Duty Cycle

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

MAX. (V

Note1

= 25°C)

= 0 V)

= –10 V, I

= –4.5 V, I

= –4.0 V, I

P-CHANNEL POWER MOS FET

Power SOP8

PACKAGE

Note2

1 %

The mark

= –6.5 A)

= 25°C, All terminals are connected.)

INDUSTRIAL USE

= –6.5 A)

D(pulse)

D(DC)

GSS

DSS

stg

DATA SHEET

SWITCHING

shows major revised points.

–55 to +150

x 2.2 mm

m 13.0

m 52.0

MOS FIELD EFFECT TRANSISTOR

–30

150

2.2

°C

PACKAGE DRAWING (Unit : mm)

5.37 MAX.

0.40

1.27

+0.10

–0.05

0.78 MAX.

0.12 M

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1,2,3

5,6,7,8

0.5 ±0.2

6.0 ±0.3

PA1730

4.4

; Source

; Gate

; Drain

Source

Drain

Body

Diode

0.8

1999

0.10

Related parts for upa1730g

upa1730g Summary of contents

Page 1

P-CHANNEL POWER MOS FET DESCRIPTION The PA1730 is P-Channel MOS Field Effect Transis- tor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES Low on-resistance R = 9.5 m MAX – ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 150˚ 125˚C 75˚C 25˚C 0.1 25˚C 50˚C 0.01 0.001 0.0001 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 100 150 Channel Temperature - ˚C ...

Page 6

Data Sheet G14284EJ2V0DS PA1730 ...

Page 7

Data Sheet G14284EJ2V0DS PA1730 7 ...

Page 8

The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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