si7530dp Vishay, si7530dp Datasheet
si7530dp
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si7530dp Summary of contents
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... Bottom View Ordering Information: Si7530DP-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150°C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Single Pulse Repetitive Avalanche Energy ...
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... Si7530DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static V Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a r Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...
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... Q Total Gate Charge (nC) g Gate Charge Document Number: 73249 S-51566-Rev. C, 07-Nov-05 New Product Si7530DP Vishay Siliconix ˚ 125 ˚ 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... Si7530DP Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 40 ˚ 150 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 0 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature ( J Threshold Voltage www.vishay.com 4 New Product ˚ 0.8 1.0 1.2 = 250 µ 100 125 150 ˚ C) 100 ...
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... S-51566-Rev. C, 07-Nov-05 New Product Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Si7530DP Vishay Siliconix Notes Duty Cycle ˚ ...
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... Si7530DP Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.12 0. 0.06 0.04 0.02 0. Drain Current (A) D On-Resistance vs. Drain Current ...
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... Single Pulse 0.01 0.001 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area Si7530DP Vishay Siliconix Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0.1 1 Time (sec) Single Pulse Power, Junction-to-Ambient 10 µ ...
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... Si7530DP Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...