cph6302 Sanyo Semiconductor Corporation, cph6302 Datasheet - Page 3

• Manufacturer Part Number: cph6302
• Description: P-channel Mos Silicon Fet
• Manufacturer: Sanyo Semiconductor Corporation

10000
1000
1000
500
400
300
200
100
100
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
10
10
0
-60
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
5
0
0
7
-40
-0.1
20
-5
-20
Drain-to-Source Voltage, V
Ciss,Coss,Crss - V DS
Ambient Temperature, Ta – ˚C
Ambient Temperature, Ta – ˚C
40
2
0
SW Time - I D
-10
Drain Current, I
R DS (on) - Ta
3
60
P D - Ta
20
5
-15
40
80
7
-1.0
D
60
100
t
d(on)
– A
-20
DS
80
2
120
– V
3
100
V
V
-25
DD
GS
f =1MHz
140
5
=–10V
120
=–15V
Ciss
CPH6302
7
-30
140
-10
160
-0.001
-0.01
-0.01
-1.0
-0.1
-10
-1.0
-0.1
-10
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
-0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
Mounted on a ceramic board (900mm
V
Ta=25 C
1 Pulse
V
I
I
D
GS
DP
DS
=–3A
-0.1
2 3
=–12A
=0
=–10V
-2
-0.2
Operation in this area
is limited by R
5 7
Drain-to-Source Voltage, V
Diode Forward Voltage, V
Total Gate Charge, Qg – nC
-0.1
-0.3
-4
2 3
V GS - Q g
I F - V SD
-0.4
A S O
DS
5
-0.5
(on).
-6
I
7
D
-1.0
=–3A
-0.6
2 3
-8
SD
DS
-0.7
5 7
– V
– V
-0.8
-10
-10
100 s
-0.9
No.5939-3/4
2 3
-12
-1.0
5