HFA3127 INTERSIL [Intersil Corporation], HFA3127 Datasheet

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HFA3127

Manufacturer Part Number
HFA3127
Description
Ultra High Frequency Transistor Arrays
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
1.HFA3127.pdf (9 pages)

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Ultra High Frequency Transistor Arrays
The HFA3046, HFA3096, HFA3127 and the HFA3128 are
Ultra High Frequency Transistor Arrays that are fabricated
from Intersil Corporation’s complementary bipolar UHF-1
process. Each array consists of five dielectrically isolated
transistors on a common monolithic substrate. The NPN
transistors exhibit a f
provide a f
making them ideal for high frequency amplifier and mixer
applications.
The HFA3046 and HFA3127 are all NPN arrays while the
HFA3128 has all PNP transistors. The HFA3096 is an NPN-
PNP combination. Access is provided to each of the
terminals for the individual transistors for maximum
application flexibility. Monolithic construction of these
transistor arrays provides close electrical and thermal
matching of the five transistors.
For PSPICE models, please request AnswerFAX document
number 663046. Intersil also provides an Application Note
illustrating the use of these devices as RF amplifiers
(request AnswerFAX document 99315).
Ordering Information
Pinouts
HFA3046B
HFA3096B
HFA3127B
HFA3128B
PART NUMBER
1
2
3
4
5
6
7
Q
Q
TOP VIEW
T
HFA3046
1
2
of 5.5GHz. Both types exhibit low noise (3.5dB),
Q
3
Q
Q
5
4
T
14
13
12
10
11
9
8
of 8GHz while the PNP transistors
RANGE (
-55 to 125
-55 to 125
-55 to 125
-55 to 125
3-447
TEMP.
o
C)
Data Sheet
14 Ld SOIC
16 Ld SOIC
16 Ld SOIC
16 Ld SOIC
PACKAGE
1
2
3
4
5
6
7
8
Q
Q
TOP VIEW
2
3
HFA3096
Q
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
M14.15
M16.15
M16.15
M16.15
Q
Q
4
PKG.
5
NO.
16
15
14
13
12
11
10
9
NC
http://www.intersil.com or 407-727-9207
Features
• NPN Transistor (f
• NPN Current Gain (h
• NPN Early Voltage (V
• PNP Transistor (f
• PNP Current Gain (h
• PNP Early Voltage (V
• Noise Figure (50 ) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA
• Complete Isolation Between Transistors
• Pin Compatible with Industry Standard 3XXX Series
Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors
NC
Arrays
1
2
3
4
5
6
7
8
Q
Q
TOP VIEW
HFA3127
2
3
October 1998
Q
Q
Q
1
5
4
16
15
14
13
12
11
10
T
T
9
) . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
HFA3046, HFA3096,
HFA3127, HFA3128
FE
FE
A
A
) . . . . . . . . . . . . . . . . . . . . . . . 20V
) . . . . . . . . . . . . . . . . . . . . . . . 50V
). . . . . . . . . . . . . . . . . . . . . . . 130
) . . . . . . . . . . . . . . . . . . . . . . . . 60
|
Copyright
File Number 3076.10
NC
1
2
3
4
5
6
7
8
©
Q
Q
TOP VIEW
Intersil Corporation 1999
HFA3128
3
2
Q
Q
Q
1
5
4
16
15
14
13
12
11
10
9

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HFA3127 Summary of contents

Page 1

... T making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN- PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application fl ...

Page 2

... HFA3046, HFA3096, HFA3127, HFA3128 Absolute Maximum Ratings Collector to Emitter Voltage (Open Base Collector to Base Voltage (Open Emitter 12V Emitter to Base Voltage (Reverse Bias 5.5V Collector Current (100% Duty Cycle 18.5mA at T Peak Collector Current (Any Condition 65mA Operating Information Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specifi ...

Page 3

... HFA3046, HFA3096, HFA3127, HFA3128 Electrical Specifications PARAMETER Base-to-Emitter Capacitance V BE Collector-to-Base Capacitance V CB Electrical Specifications PARAMETER DC PNP CHARACTERISTICS Collector-to-Base Breakdown I = -100 Voltage, V (BR)CBO Collector-to-Emitter Breakdown I = -100 Voltage, V (BR)CEO Collector-to-Emitter Breakdown ...

Page 4

... HFA3046, HFA3096, HFA3127, HFA3128 Electrical Specifications PARAMETER DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046 Input Offset Voltage I = 10mA Input Offset Current I = 10mA Input Offset Voltage 10mA S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation’s web site. ...

Page 5

... HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of NPN Transistor FREQ. (Hz PHASE and I = 10mA CE C 1.0E+08 0.72 -16.43 2.0E+08 0.67 -31.26 3.0E+08 0.60 -43.76 4.0E+08 0.53 -54.00 5.0E+08 0.47 -62.38 6.0E+08 0.42 -69.35 7.0E+08 0.37 -75.26 8.0E+08 0.34 -80.36 9.0E+08 0.31 -84.84 1.0E+09 0.29 -88.83 1.1E+09 0.27 -92.44 1.2E+09 0.25 -95.73 1.3E+09 0.24 -98.75 1.4E+09 0.22 -101.55 1.5E+09 0.21 -104.15 1.6E+09 0.20 -106.57 1.7E+09 0.20 -108.85 1.8E+09 0.19 -110.98 1.9E+09 0.18 -113.00 2.0E+09 0.18 -114.90 2.1E+09 0.17 -116.69 2.2E+09 0.17 -118.39 2.3E+09 0.16 -120.01 2.4E+09 0.16 -121.54 2.5E+09 0.16 -122.99 2.6E+09 0.15 -124.37 2.7E+09 0.15 -125.69 2.8E+09 0.15 -126.94 2.9E+09 0.15 -128.14 3.0E+09 0.14 -129.27 Common Emitter S-Parameters of PNP Transistor FREQ ...

Page 6

... HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of PNP Transistor FREQ. (Hz PHASE(S 11 6.0E+08 0.47 -75.83 7.0E+08 0.43 -83.18 8.0E+08 0.40 -89.60 9.0E+08 0.38 -95.26 1.0E+09 0.36 -100.29 1.1E+09 0.34 -104.80 1.2E+09 0.33 -108.86 1.3E+09 0.32 -112.53 1.4E+09 0.30 -115.86 1.5E+09 0.30 -118.90 1.6E+09 0.29 -121.69 1.7E+09 0.28 -124.24 1.8E+09 0.28 -126.59 1.9E+09 0.27 -128.76 2.0E+09 0.27 -130.77 2.1E+09 0.26 -132.63 2.2E+09 0.26 -134.35 2.3E+09 0.26 -135.96 2.4E+09 0.25 -137.46 2.5E+09 0.25 -138.86 2.6E+09 0.25 -140.17 2.7E+09 0.25 -141.39 2.8E+09 0.25 -142.54 2.9E+09 0.24 -143.62 3.0E+09 0.24 -144. -5V -10mA CE C 1.0E+08 0.58 -23.24 2.0E+08 0.53 -44.07 3.0E+08 0.48 -61.50 4.0E+08 0.43 -75.73 5.0E+08 0.40 -87.36 6.0E+08 0.37 -96.94 7.0E+08 0.35 -104.92 8.0E+08 0.33 -111.64 9.0E+08 0.32 -117.36 1 ...

Page 7

... HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of PNP Transistor FREQ. (Hz PHASE(S 11 1.3E+09 0.29 -133.46 1.4E+09 0.29 -136.33 1.5E+09 0.28 -138.89 1.6E+09 0.28 -141.17 1.7E+09 0.28 -143.21 1.8E+09 0.28 -145.06 1.9E+09 0.27 -146.73 2.0E+09 0.27 -148.26 2.1E+09 0.27 -149.65 2.2E+09 0.27 -150.92 2.3E+09 0.27 -152.10 2.4E+09 0.27 -153.18 2.5E+09 0.27 -154.17 2.6E+09 0.26 -155.10 2.7E+09 0.26 -155.96 2.8E+09 0.26 -156.76 2.9E+09 0.26 -157.51 3.0E+09 0.26 -158.21 Typical Performance Curves COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1 ...

Page 8

... HFA3046, HFA3096, HFA3127, HFA3128 Typical Performance Curves 160 140 120 100 100 1m COLLECTOR CURRENT (A) FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT -25 -20 -15 - COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE V = -3V CE 160 140 ...

Page 9

... HFA3046, HFA3096, HFA3127, HFA3128 DIE DIMENSIONS: 53 mils x 52 mils x 19 mils 1340 m x 1320 m x 483 m METALLIZATION: Type: Metal 1: AlCu(2%)/TiW Å Å Thickness: Metal 1: 8k 0.4k Type: Metal 2: AlCu(2%) Å Å Thickness: Metal 2: 16k 0.8k Metallization Mask Layout All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. ...

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