SD56120_06 STMICROELECTRONICS [STMicroelectronics], SD56120_06 Datasheet

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SD56120_06

Manufacturer Part Number
SD56120_06
Description
RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Order codes
General features
Description
The SD56120 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0GHz. The SD56120 is designed for high gain
and broadband performance operating in
common source mode at 28 V. It is ideal for
broadcast applications from 470 to 860 MHz
requiring high linearity.
July 2006
Excellent thermal stability
Common source configuration Push-pull
P
BeO free package
OUT
= 100W with 14dB gain @ 860MHz
Part number
SD56120
N-Channel enhancement-mode lateral MOSFETs
RF POWER Transistors, LDMOST plastic family
Package
M246
Rev 3
Pin connection
1-2 Drain
4-5 Gate
Epoxy sealed
1
5
M246
TSD56120
Branding
4
2
SD56120
3 Source
www.st.com
1/15
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SD56120_06 Summary of contents

Page 1

N-Channel enhancement-mode lateral MOSFETs General features ■ Excellent thermal stability ■ Common source configuration Push-pull ■ 100W with 14dB gain @ 860MHz OUT ■ BeO free package Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect ...

Page 2

Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

SD56120 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (T Symbol V (BR)DSS DISS STG 1.2 Thermal data Table 2. Thermal data Symbol R thJC CASE Parameter Drain-Source Voltage ...

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Electrical characteristics 2 Electrical characteristics T = +25 CASE 2.1 Static Table 3. Static (per section) Symbol (BR)DSS DSS GSS ...

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SD56120 3 Impedances Figure 1. Current conventions Table 5. Impedance data Freq. (MHz) 860 MHz Note: Measured drain to drain and gate to gate respectively. Z (Ω 2.63 Impedances Z (Ω 5.34 ...

Page 6

Typical performance 4 Typical performance Figure 2. Capacitance vs drain voltage (per section) C (pF) 1000 Ciss 100 Coss 10 Crss Vds (V) Figure 4. Drain current vs gate voltage Id ( ...

Page 7

SD56120 Figure 6. Power gain vs input power Pg (dB Pin (W) Figure 8. Power gain vs output power Gp (dB) 22 Idq = 800 mA 20 Idq ...

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Typical performance Figure 10. Output power vs drain voltage Pout (W) 130 120 110 100 Vds (V) Figure 12. Output power vs gate-source voltage Pout (W) 140 120 100 ...

Page 9

SD56120 5 Test circuit Figure 13. 860MHz test circuit schematic VGG + C16 BALUN1 RF INPUT C1 VGG R4 + C17 Note: 1 Dimensions at component symbols are reference for component placement. 2 Gap between ground & transmission line = ...

Page 10

Test circuit Table 6. 860MHz test circuit component part list Component C32 C31, C28 C29, C30 C27, C22 C26, C21 C25 ,C20 C24, C19, C17, C16 C23, C18 C15, C14, C13, C12 47 pF ATC 100B SURFACE MOUNT CERAMIC CHIP ...

Page 11

SD56120 Figure 14. 860MHz production test fixture Figure 15. 860MHz test circuit photomaster + + 6.4 inches Test circuit + 11/15 ...

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Package mechanical data 6 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package ...

Page 13

SD56120 Table 7. M246 (.230 x .650 WIDE 4/L BAL N/HERM W/FLG) mechanical data Dim Figure 16. Package dimensions Controlling dimension: Inches mm. Min Typ Max 5.33 5.59 ...

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Revision history 7 Revision history Table 8. Revision history Date 18-Jun-2001 12-Sep-2004 13-Jul-2006 14/15 Revision 1 First Issue 2 Few updates 3 New template, added lead free info SD56120 Changes ...

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SD56120 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at ...

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