SDB06S60_05 INFINEON [Infineon Technologies AG], SDB06S60_05 Datasheet
SDB06S60_05
Related parts for SDB06S60_05
SDB06S60_05 Summary of contents
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Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor 1) ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: P-TO263-3-2: @ min. footprint 2 P-TO263-3- cooling area P-TO252-3-1: @ min. footprint 2 P-TO252-3- ...
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Electrical Characteristics Parameter AC Characteristics Total capacitive charge =400V, I =6A /dt=200A/µ Switching time =400V, I =6A /dt=200A/µ Total capacitance =0V, T =25°C, f=1MHz V R ...
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Power dissipation tot 100 120 140 3 Typ. forward characteristic = ...
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Typ. reverse current vs. reverse voltage = µA 1 150°C 10 125°C 100°C 25° 100 150 200 250 300 350 400 450 500 ...
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Typ. capacitive charge vs. current slope parameter 150 ° *0 ...
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PG-TO220-3-45 (D2Pak): Outline Dimensions in mm/inches Rev. 2.0 Rev. 2.0 page 7 page 7 SDB06S60 2005-02-17 2005-02-17 ...
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Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...