D423AG-00 HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD], D423AG-00 Datasheet
D423AG-00
Manufacturer Part Number
D423AG-00
Description
NPN SILICON TRANSISTOR
Manufacturer
HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
Datasheet
1.D423AG-00.pdf
(1 pages)
█ 芯片简介
█ 极限值
█ 电参数
BV
I
h
V
V
C
f
t
t
t
芯片尺寸：4 英寸（100mm）
芯片代码：D423AG-00
芯片厚度：240±20µm
管芯尺寸：4230×4230µm
焊位尺寸： B 极 1200×420µm
电极金属：铝
背面金属：银
典型封装：KSE13009，HE13009
T
T
P
V
V
V
I
I
ON
STG
F
EBO
T
参数符号
C
B
FE
ob
C
CE
BE
stg
j
CBO
CEO
EBO
——结温……………………………………………… 150℃
——集电极电流（DC）…………………………………16A
——基极电流………………………………………………6A
——集电极耗散功率（T
CEO
(sat)
(sat)
——贮存温度………………………………… -65~150℃
——发射极—基极电压…………………………………9V
——集电极—基极电压…………………………… 700V
——集电极—发射极电压………………………… 400V
汕头华汕电子器件有限公司
（T
（T
集电极—发射极击穿电压
发射极—基极截止电流
直流电流增益
集电极—发射极饱和压降
基极—发射极饱和压降
共基极输出电容
特征频率
导通时间
贮存时间
下降时间
a
a
=25℃） （封装形式：TO-220）
=25℃） （封装形式：TO-220）
符 号 说 明
2
c
=25℃）………………… 100W
2
， E 极 1140×540µm
最小值 典型值 最大值 单 位
400
10
4
6
2
N P N
13009 晶体管芯片说明书
180
S I L I C O N
1.5
1.2
1.6
1.1
3.0
0.7
40
30
█ 管芯示意图
1
1
3
MHz
mA
pF
µS
µS
µS
V
V
V
V
V
V
T R A N S I S T O R
I
V
V
V
I
I
I
I
I
V
V
C
C
C
C
C
C
EB
CE
CE
CB
CE
=10mA，I
=5A，I
=8A，I
=12A，I
=5A，I
=8A，I
测 试 条 件
V
I
=9V，I
=5V，I
=5V，I
=10V，I
=10V，f=0.1MHz
B1
CC
=-I
=125V，I
B2
B
B
B
B
=1A
=1.6A
=1A
=1.6A
B
=1.6A
C
C
C
=3A
B
=0
=5A
=8A
C
=0
=0.5A
C
=8A
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