mbn1200gr HITACHI, mbn1200gr Datasheet
mbn1200gr
Manufacturer Part Number
mbn1200gr
Description
Hitachi Igbt Module / Silicon N-channel Igbt
Manufacturer
HITACHI
Datasheet
1.MBN1200GR.pdf
(4 pages)
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[Rated 1200A/1200V, Single-pack type]
FEATURES
CIRCUIT DIAGRAM
ABSOLUTE MAXIMUM RATINGS (T
Notes; *1 : RMS current of diode ≤ 360 Arms
CHARACTERISTICS (T
Notes; *4 : R
Remark; For actual application,please confirm this spec.sheet is the newest revision.
• Low saturation voltage and high speed.
• Low turn-OFF switching loss.
• Low noise due to built-in free-wheeling diode.
• High reliability structure.
• Isolated heat sink (terminals to base).
Hitachi IGBT Module / Silicon N-Channel IGBT
MBN1200GR12A
Reverse Recovery Time
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Forward Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Switching Times
Peak Forward Voltage Drop
Thermal Impedance
(Ultra Soft and Fast recovery Diode (USFD))
*2 : Recommended value 1.18 / 7.35 N·m
*3 : Recommended value 2.45 N·m
the suitable R
G
value is the test condition’s value for decision of the switching times, not recommended value, please determine
E
G
E
Item
Item
G
value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.
IGBT
FWD
DC
1ms
DC
1ms
Terminals(M4/M8)
Mounting
Rise Time
Turn-On Time
Fall Time
Turn-Off Time
C
=25°C)
C
Symbol
V
V
R
R
I
I
CE(sat)
GE(TO)
V
C
CES
GES
t
t
th(j-c)
th(j-c)
t
t
on
t
off
FM
rr
ies
r
f
C
Symbol
=25°C)
V
V
V
T
I
I
P
-
GES
I
T
CES
CP
I
FM
C
stg
F
iso
°C/W
C
j
Unit
mA
nA
nF
µs
µs
V
V
V
Min.
OUTLINE DRAWING
-
-
-
-
-
-
-
-
-
-
-
-
N·m
Unit
°C
°C
W
V
V
A
A
V
RMS
Typ.
108
2.4
0.6
0.8
0.2
1.4
2.5
-
-
-
-
-
2-M4
0.035
±500
0.015
Max.
1.0
3.0
1.5
2.1
0.4
1.8
3.7
0.5
10
-
V
V
I
V
V
V
R
V
Inductive Load
I
I
Junction to case
2500(AC 1 minute)
13
C
F
F
E
CE
GE
CE
CE
CC
GE
G
=1200A, V
=1200A, V
=1200A, V
=3.3Ω
=1200V, V
=5V, I
=10V, V
G
=±20V, V
=600V, I
=±15V
1.37 / 7.84
-40 ~ +150
-40 ~ +125
30
E
1200
130
110
Value
2.94
1200
1200
2400
2400
8330
±20
C
Test Conditions
=1200mA
36
PDE-N1200GR12A-0
*4
GE
C
C
GE
GE
GE
CE
=1200A
*3
=0V, f=1MHz
GE
*1
=0V
=-10V,di/dt=1200A/µs
=15V
=0V
19
=0V
*2
Weight：1300g
2-M8
Unit in mm
4- 6.5
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mbn1200gr Summary of contents
Page 1
... Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [Rated 1200A/1200V, Single-pack type] FEATURES • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) • High reliability structure. ...
Page 2
V 15V 14V13V12V GE 2400 2200 2000 1800 1600 Pc 8330W 1400 1200 1000 800 600 400 200 Collector to Emitter Voltage, V Collector current vs. Collector to Emitter voltage 10 Tc ...
Page 3
Vcc 600V V 15V GE 350 R 3 125 C C 300 Inductive Load 250 200 150 100 200 400 600 800 1000 Collector Current Switching loss vs. Collector current 10000 V ...
Page 4
... Or consult Hitachi’s sales department staff event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets ...