mbn1200gr HITACHI, mbn1200gr Datasheet - Page 3

• Manufacturer Part Number: mbn1200gr
• Description: Hitachi Igbt Module / Silicon N-channel Igbt
• Manufacturer: HITACHI

10000
1000
100
400
350
300
250
200
150
100
10
50
1
0
0
0
V
R
T
Vcc 600V
V
R
T
Inductive Load
C
GE
G
C
GE
G
125 C
3.3
200
125 C
200
Switching loss vs. Collector current
3.3
15V
Reverse biased safe operating area
15V
Collector to Emitter Voltage, V
400
400
Collector Current. I
600
600
800
800
1000
C
1000
(A)
1200
CE
TYPICAL
1200
(V)
Etoff
Eton
Err
1400
1400
0.001
1000
0.01
100
0.1
10
1
1
0.001
1
Switching loss vs. Gate resistance
Transient thermal impedance
0.01
Gate Resistance. R
Time, t (s)
0.1
10
Etoff
Eton
Err
G
Vcc 600V
V
I
T
Inductive Load
C
GE
C
( )
1
1200A
125 C
PDE-N1200GR12A-0
15V
TYPICAL
Diode
IGBT
100
10