mbm150gr HITACHI, mbm150gr Datasheet - Page 2

• Manufacturer Part Number: mbm150gr
• Description: Hitachi Igbt Module / Silicon N-channel Igbt
• Manufacturer: HITACHI

Collector to Emitter voltage vs. Gate to Emitter voltage
300
250
200
150
100
20
15
10
50
10
0
5
0
8
6
4
2
0
0
0
0
Collector current vs. Collector to Emitter voltage
Tc 25 C
Tc 25 C
Vcc 600V
Ic 150A
Tc 25 C
V
Collector to Emitter Voltage, V
200
GE
Gate charge characteristics
Gate to Emitter Voltage, V
2
15V 14V13V12V
5
Gate Charge, Q
400
4
10
600
6
G
(nC)
Pc 1000W
GE
15
800
CE
Ic 300A
Ic 150A
(V)
TYPICAL
8
TYPICAL
TYPICAL
(V)
1000
20
10
11V
10V
9V
300
250
200
150
100
300
250
200
150
100
Collector to Emitter voltage vs. Gate to Emitter voltage
50
50
10
0
0
0
8
6
4
2
0
Collector current vs. Collector to Emitter voltage
0
0
0
V
Tc 25 C
Tc 125 C
Tc 125 C
Tc 125 C
GE
Forward voltage of free-wheeling diode
0V
V
Collector to Emitter Voltage, V
GE
Gate to Emitter Voltage, V
1
2
15V 14V13V12V
5
Forward Voltage, V
2
4
10
3
6
F
(V)
GE
15
CE
(V)
4
Ic 300A
Ic 150A
TYPICAL
8
TYPICAL
TYPICAL
PDE-M150GR12A-0
(V)
20
5
10
11V
10V
9V