mbm150gr HITACHI, mbm150gr Datasheet - Page 3

• Manufacturer Part Number: mbm150gr
• Description: Hitachi Igbt Module / Silicon N-channel Igbt
• Manufacturer: HITACHI

10000
1000
100
1.5
0.5
10
25
20
15
10
30
1
1
0
5
0
0
0
0
Vcc 600V
V
R
T
Inductive Load
Vcc 600V
V
R
T
Inductive Load
V
R
T
C
C
GE
GE
G
G
GE
C
G
Switching time vs. Collector current
200
125 C
25 C
8.2
Switching loss vs. Collector current
8.2
125 C
8.2
Reverse biased safe operating area
15V
15V
15V
Collector to Emitter Voltage, V
50
50
400
Collector Current, I
Collector Current. I
600
100
100
800
C
1000
C
(A)
(A)
150
150
toff
ton
tr
tf
1200
CE
Eton
Etoff
TYPICAL
TYPICAL
Err
(V)
1400
200
200
0.001
0.01
0.01
100
0.1
0.1
0.1
10
10
1
1
0.001
1
1
1
Vcc 600V
V
I
T
Inductive Load
C
Vcc 600V
V
I
T
Inductive Load
GE
C
C
C
GE
150A
125 C
150A
25 C
Switching time vs. Gate resistance
15V
15V
Switching loss vs. Gate resistance
Transient thermal impedance
0.01
Gate Resistance, R
Gate Resistance. R
Time, t (s)
0.1
10
10
G
G
( )
( )
1
Eton
Etoff
Err
ton
toff
tr
tf
PDE-M150GR12A-0
TYPICAL
TYPICAL
Diode
IGBT
100
10
100