mbm100gr HITACHI, mbm100gr Datasheet - Page 3

• Manufacturer Part Number: mbm100gr
• Description: Hitachi Igbt Module / Silicon N-channel Igbt
• Manufacturer: HITACHI

1000
100
1.5
0.5
0.1
10
20
15
10
1
0
1
5
0
0
0
0
V
V
R
T
Inductive Load
Vcc 600V
V
R
T
Inductive Load
V
R
T
C
CC
GE
G
C
GE
GE
C
G
G
Switching time vs. Collector current
125 C
25 C
12
125 C
12
Switching loss vs. Collector current
200
12
600V
Reverse biased safe operating area
15V
15V
15V
Collector to Emitter Voltage, V
Collector Current, I
400
Collector Current. I
50
50
600
800
100
C
100
C
1000
(A)
toff
(A)
ton
Etoff
Eton
Err
tr
tf
CE
TYPICAL
TYPICAL
1200
(V)
150
1400
150
0.001
0.01
0.01
100
0.1
0.1
0.1
10
10
1
1
1
0.001
1
1
V
V
I
T
Inductive Load
V
V
I
T
Inductive Load
C
C
CC
GE
C
CC
GE
C
100A
100A
25 C
125 C
600V
600V
Switching time vs. Gate resistance
15V
15V
Switching loss vs. Gate resistance
Transient thermal impedance
0.01
Gate Resistance, R
Gate Resistance. R
Time, t (s)
0.1
10
10
G
G
( )
( )
1
PDE-M100GR12A-0
TYPICAL
TYPICAL
Diode
IGBT
toff
ton
tr
tf
Eton
Etoff
Err
100
100
10