mgf0840g Mitsumi Electronics, Corp., mgf0840g Datasheet
mgf0840g
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mgf0840g Summary of contents
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... DESCRIPTION The MGF0840G, GaN HEMT with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES High voltage operation : VDS = 47 V High output power : Po = 40.0 dBm (typ.) @ P3dB High efficiency : (typ.) @ P3dB Designed for use in Class AB linear amplifiers APPLICATIONS ...
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... Example of Circuit Schematic and Characteristics : f = 2.6 GHz 0.4 0.2 0.0 Example of circuit CSTG-XXXXX 50 f=2.6GHz 45 VD=47V IDQ=90mA 40 Ta=25deg Pin(dBm) 2 Mitsubishi Semiconductors < GaN HEMT > MGF0840G 10 W GaN HEMT [ non-matched ] 100 Effi Nov. / 2010 ...
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... Mitsubishi Semiconductors < GaN HEMT > MGF0840G [ non-matched ] S12 S22 (ang) (mag) (ang) -6.7 0.446 -102.7 0.3 0.389 -120.9 4.0 0.356 -129.0 -1.3 0.379 -130.1 -10.8 0.389 -137.9 -18.1 0.407 -143.8 -22.6 0.379 -144 ...
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... The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer. CSTG-XXXXX Mitsubishi Semiconductors < GaN HEMT > GaN HEMT 4 MGF0840G [ non-matched ] Nov. / 2010 ...