TS861I STMICROELECTRONICS [STMicroelectronics], TS861I Datasheet - Page 4
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TS861I
Manufacturer Part Number
TS861I
Description
RAIL TO RAIL MICROPOWER BICMOS COMPARATORS
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
1.TS861I.pdf
(15 pages)
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TS861-TS862-TS864
ELECTRICAL CHARACTERISTICS
V
T
1. Maximum values including unavoidable inaccurates of the industrial test..
2. Design evaluation
3. Limits are 100% production tested at 25°C. Limits over temperature are guaranteed through correlation and by design
4/15
Symbol
CC
amb
CMR
SVR
Tplh
Tphl
V
V
A
V
I
I
I
Tf
Tr
= +5V
CC
V
OH
io
ib
OL
= 25°C (unless otherwise specified)
vd
io
io
Input Offset Voltage
Input Offset Voltage Drift
Input Offset Current
Input Bias Current
High Level Output Voltage
Low Level Output Voltage
Large Signal Voltage Gain
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Supply current per comparator
Propagation delay from output low to output high
V
Propagation delay from output high to output low
V
Fall time
f=10kHz, C
Rise time
f=10kHz, C
ICM
ICM
=2.5V, f=10kHz, C
=2.5V, f=10kHz, C
0 < V
2.7 < Vcc < 10V
Isource=5mA
Isink=5mA
no load, output low
no load, output high
L
L
ICM
=50pF, overdrive=100mV
=50pF, overdrive=100mV
< 5V
1)
1)
L
L
=50pF
=50pF
2)
Parameter
TS861/2/4
Tmin<T<Tmax
TS861/2/4A
Tmin<T<Tmax
Tmin<T<Tmax
Tmin<T<Tmax
Tmin<T<Tmax
Tmin<T<Tmax
overdrive = 10mV
overdrive = 100mV
overdrive = 10mV
overdrive = 100mV
Min.
4.45
4.6
Typ.
240
4.8
0.2
0.5
0.4
70
80
20
20
3
3
6
1
1
6
8
2
2
Max.
0.55
150
300
300
600
0.4
15
18
10
12
14
7
Unit
mV
V/°C
pA
pA
dB
dB
dB
µs
µs
ns
ns
V
V
A