ST2302 STANSON [Stanson Technology], ST2302 Datasheet
ST2302
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ST2302 Summary of contents
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... N Channel Enchancement Mode MOSFET 3.6A DESCRIPTION The ST2302 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package ...
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... Continuous Drain Current (TJ=150 ℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 ST2302 Symbol V DSS V GSS =25℃ =70 ℃ ...
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... Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 ST2302 Symbol Condition V V =0V,I =10uA (BR)DSS ...
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... N Channel Enchancement Mode MOSFET 3.6A SOT-23-3L PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 ST2302 Page4 ...
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... N Channel Enchancement Mode MOSFET 3.6A TYPICAL CHARACTERISTICS ST2302 Page 5 ...
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... N Channel Enchancement Mode MOSFET 3.6A TYPICAL CHARACTERISTICS(25 ℃ Unless noted) ST2302 Page 6 ...