rf2137 RF Micro Devices, rf2137 Datasheet

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rf2137

Manufacturer Part Number
rf2137
Description
Linear Power Amplifier
Manufacturer
RF Micro Devices
Datasheet
Product Description
The RF2137 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in dual-mode 4-cell CDMA/AMPS hand-held
digital cellular equipment, spread spectrum systems, and
other applications in the 800MHz to 950MHz band. The
device is self-contained with 50
can be easily matched to obtain optimum power, effi-
ciency, and linearity characteristics at all recommended
supply voltages.
Optimum Technology Matching® Applied
Rev B2 010720
Typical Applicat ions
• 4.8V AMPS Cellular Handsets
• 4.8V CDMA/AMPS Handsets
• 4.8V JCDMA/TACS Handsets
Si BJT
Si Bi-CMOS
RF IN
GND
VCC
PC
Funct ional Block Diagram
1
2
3
4
ü
PACKAGE BASE
GaAs HBT
SiGe HBT
BIAS
GND
2
input and the output
GaAs MESFET
Si CMOS
8
7
6
5
RF OUT
RF OUT
RF OUT
RF OUT
• Driver Amplifier in Cellular Base Stations
• Portable Battery-Powered Equipment
Feat ures
Ordering Infor mat ion
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• Single 4.2V to 6.0V Supply
• Up to 29 dBm Linear Output Power
• 27dB Gain With Analog Gain Control
• 45% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 950MHz Operation
RF2137
RF2137 PCBA
8° MAX
0° MIN
± 0.10
4.90
xxx
± 0.15
0.60
± 0.10
± 0.20
3.90
6.00
Dimensions in mm.
Package St yle: SOIC-8 Slug
Linear Power Amplifier
Fully Assembled Evaluation Board
± 0.05
LINEAR POWER AMPLIFIER
1.27
0.43
± 0.03
0.22
NOTES:
1. Shaded lead is pin 1.
2. Lead coplanarity - 0.10 with respect to datum "A".
-A-
± 0.05
± 0.10
0.05
1.40
± 0.10
1.70
RF2137
http://www.rfmd.com
Fax (336) 664 0454
Tel (336) 664 1233
Heat Sink
Exposed
± 0.10
2.70
2-115
2

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rf2137 Summary of contents

Page 1

... AMPS Cellular Handsets • 4.8V CDMA/AMPS Handsets • 4.8V JCDMA/TACS Handsets Product Description The RF2137 is a high power, high efficiency linear ampli- fier IC. The device is manufactured on an advanced Gal- lium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF ...

Page 2

... RF2137 Absolute Maximum Ratings Parameter Supply Voltage (No RF) Supply Voltage (P <31dBm) OUT Power Control Voltage ( Supply Current 2 Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Parameter Overall Usable Frequency Range Linear Gain Total Linear Efficiency Efficiency at Max Output ...

Page 3

... RF output power. The maximum power that , whichever is lowest 4.7 nH 2137400A BIAS 4 5 PACKAGE BASE RF2137 Interface Schematic VCC RF IN From Bias Stages See pin Transistors RF OUT From Bias Stages See pin 5. See pin 5. See pin 5. ...

Page 4

... RF2137 2 2-118 Evaluation Board Layout 1.559" X 1.191" Rev B2 010720 ...

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