IRF1407SPBF IRF [International Rectifier], IRF1407SPBF Datasheet - Page 2

• Manufacturer Part Number: IRF1407SPBF
• Manufacturer: IRF [International Rectifier]

IRF1407S/LPbF
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
I
I
I
I
V
t
Q
t
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C

‚
ƒ
„
L
L
Notes:
DSS
GSS
S
SM
rr
on
d(on)
r
d(off)
f
2
fs
D
S
SD
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
rr
g
gs
gd
(BR)DSS
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
I
T
R
max. junction temperature. (See fig. 11).
Starting T
SD
J
G
eff.
≤ 175°C
≤ 78A, di/dt ≤ 320A/µs, V
= 25Ω, I
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
Drain-to-Source Leakage Current
Effective Output Capacitance …
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
= 25°C, L = 0.13mH
AS
= 78A. (See Figure 12).
Parameter
Parameter
DD
≤ V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
…
†
‡
ˆ
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
Min. Typ. Max. Units
2.0
C
–––
–––
–––
–––
–––
75
74
–––
as C
oss
Calculated continuous current based on maximum allowable
Limited by T
Uses IRF1407 data and test conditions.
junction temperature. Package limitation current is 75A.
Intrinsic turn-on time is negligible (turn-on is dominated by L
avalanche performance.
eff. is a fixed capacitance that gives the same charging time
oss
5600 –––
5800 –––
1100 –––
0.09 –––
–––
–––
–––
110
390
–––
––– 0.0078
–––
–––
–––
–––
–––
––– -200
160
150
150
140
890
190
560
4.5
35
54
11
7.5
while V
100†
–––
170
590
–––
–––
250
200
250
–––
–––
–––
–––
–––
–––
–––
–––
1.3
4.0
520
20
52
81
Jmax
DS
is rising from 0 to 80% V
, see Fig.12a, 12b, 15, 16 for typical repetitive
V/°C
nH
nC
µA
nA
nC
ns
pF
ns
V
Ω
V
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „ˆ
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0KHz, See Fig. 5 ˆ
V
V
V
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 78A
= 78A
= 25°C, I
= 25°C, I
= 2.5Ω
= 0V, I
= 10V, I
= 10V, I
= 25V, I
= 75V, V
= 60V, V
= 20V
= -20V
= 60V
= 10V„ˆ
= 38V
= 10V „ˆ
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
GS
GS
Conditions
= 78A, V
= 78A
= 250µA
= 78A ˆ
= 78A „
= 0V to 60V
= 1.0V, ƒ = 1.0KHz
= 60V, ƒ = 1.0KHz
DSS
= 0V
= 0V, T
.
www.irf.com
D
GS
= 1mA ˆ
J
= 0V „
= 150°C
G
G
S
+L
D
D
S
)
S
D