SI4618DY-T1-GE3 VISHAY [Vishay Siliconix], SI4618DY-T1-GE3 Datasheet - Page 9

• Manufacturer Part Number: SI4618DY-T1-GE3
• Description: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
0.001
0.01
10
10
10
10
10
10
100
0.1
10
-2
-3
-4
-6
-1
-5
1
0.00
0
Source-Drain Diode Forward Voltage
20 V
0.2
25
Reverse Current (Schottky)
V
V
SD
SD
- Source-to-Drain Voltage (V)
- Source-to-Drain Voltage (V)
25 °C
150 °C
0.4
50
0.6
75
30 V
Limited by R
0.01
10 V
100
0.1
10
1
0
0.8
100
1 .
* V
Safe Operating Area, Junction-to-Ambient
GS
DS(on)
1.0
125
*
V
minimum V
DS
- Drain-to-Source Voltage (V)
1.2
150
Single Pulse
1
T
A
= 25 °C
GS
at which R
10
DS(on)
0.05
0.04
0.03
0.02
0.01
0.00
200
160
120
is specified
80
40
0
0
0 .
0
1 ms
10 ms
100 ms
10 s
1 s
DC
0
I
1
D
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
= 8 A
1
1
0
0
2
V
0.01
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
125 °C
5
Vishay Siliconix
25 °C
6
Si4618DY
7
www.vishay.com
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10
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