BZX55-C10 GE [General Semiconductor], BZX55-C10 Datasheet
BZX55-C10
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BZX55-C10 Summary of contents
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... BZX55-C0V8 THRU BZX55-C75 DO-35 max. Cathode Mark max. Dimensions are in inches and (millimeters) Ratings at 25°C ambient temperature unless otherwise specified. Zener Current (see Table “Characteristics”) Power Dissipation at Tamb = 25°C Junction Temperature Storage Temperature Range Thermal Resistance Junction to Ambient Air Forward Voltage ...
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... Valid provided that leads are kept at ambient temperature at a distance from case (3) The BZX55–C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be “F” instead of “Z”. Connect the cathode lead to the negative pole ( ...
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... RATINGS AND CHARACTERISTIC CURVES BZX55-C0V8 THRU BZX55-C75 ...
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... RATINGS AND CHARACTERISTIC CURVES BZX55-C0V8 THRU BZX55-C75 ...
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... RATINGS AND CHARACTERISTIC CURVES BZX55-C0V8 THRU BZX55-C75 ...
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... RATINGS AND CHARACTERISTIC CURVES BZX55-C0V8 THRU BZX55-C75 ...