k6x0808c1d Samsung Semiconductor, Inc., k6x0808c1d Datasheet - Page 5

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k6x0808c1d

Manufacturer Part Number
k6x0808c1d
Description
32kx8 Bit Low Power Cmos Static Ram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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K6X0808C1D Family
DATA RETENTION CHARACTERISTICS
AC OPERATING CONDITIONS
TEST CONDITIONS
AC CHARACTERISTICS
1. The parameter is tested with 50pF test load.
Input and output reference voltage: 1.5V
Output load (See right): C
Input pulse level: 0.8 to 2.4V
Input rising and falling time: 5ns
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Read
Write
Item
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
(Test Load and Test Input/Output Reference)
Parameter List
C
L
L
=50pF+1TTL
=100pF+1TTL
Symbol
V
I
t
t
DR
SDR
RDR
DR
(Vcc=4.5~5.5V, Commercial product: T
CS Vcc-0.2V
Vcc=3.0V, CS Vcc-0.2V
See data retention waveform
Test Condition
5
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
OLZ
t
OHZ
t
t
WC
CW
AW
WP
WR
DW
OW
RC
CO
OE
OH
DH
AA
HZ
AS
LZ
A
K6X0808C1D-F
K6X0808C1D-Q
=0 to 70 C, Industrial product: T
1. Including scope and jig capacitance
C
Min
L
55
10
10
55
45
45
40
25
5
0
0
0
0
0
0
5
1)
-
-
-
55
1)
ns
Max
55
55
25
20
20
20
Speed Bins
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
2.0
0
5
-
-
CMOS SRAM
Min
70
10
10
70
60
60
50
30
Typ
5
0
0
0
0
0
0
5
-
-
-
-
-
-
-
-
A
=-40 to 85 C)
70ns
December 2003
Max
Max
70
70
35
30
30
25
5.5
-
-
-
-
-
-
-
-
-
-
-
-
-
10
20
-
-
Revision 1.0
Units
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
V
A

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