k4j55323qi Samsung Semiconductor, Inc., k4j55323qi Datasheet - Page 33

• Manufacturer Part Number: k4j55323qi
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4J55323QI
COMMAND
WRITE Burst
ADDRESS
t
t
t
DQSS
DQSS
DQSS
WDQS
WDQS
WDQS
NOTE
/CK
CK
DM
DM
DM
DQ
DQ
DQ
(NOM)
(MIN)
(MAX)
:
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. A burst of 4 is shown.
4. A8 is LOW with the WRITE command (auto precharge is disabled).
5. Write latency is set to 4
WRITE
Bank a,
Col b
T0
t
t
t
DQSS
DQSS
DQSS
NOP
T1
NOP
T2
33 / 54
NOP
T3
DON’T CARE
T3n
DI
b
NOP
DI
T4
b
DI
b
256M GDDR3 SDRAM
T4n
TRANSITIONING DATA
NOP
T5
Rev. 1.3 May 2007
T5n
NOP
T6