MRF8372R1 MOTOROLA [Motorola, Inc], MRF8372R1 Datasheet

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MRF8372R1

Manufacturer Part Number
MRF8372R1
Description
RF LOW POWER TRANSISTOR NPN SILICON
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF8372R1
Manufacturer:
INTERSIL
Quantity:
8 279
Part Number:
MRF8372R1
Manufacturer:
ASI
Quantity:
20 000
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Low Power Transistor
and UHF frequency ranges.
NOTE:
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T C = 75 C (1)
Storage Temperature Range
Maximum Junction Temperature
Thermal Resistance, Junction to Case
MRF8372 = 8372
Designed primarily for wideband large signal predriver stages in 800 MHz
Motorola, Inc. 1997
Specified @ 12.5 V, 870 MHz Characteristics
State–of–the–Art Technology
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order MRF8372 in tape and reel packaging by adding suffix:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Derate above 75 C
Output Power = 750 mW
Minimum Gain = 8.0 dB
Efficiency 60% (Typ)
Fine Line Geometry
Gold Top Metal and Wires
Silicon Nitride Passivated
Ion Implanted Arsenic Emitters
R1 suffix = 500 units per reel
R2 suffix = 2,500 units per reel
Characteristic
Rating
(Replaces MRF837/D)
Symbol
Symbol
T J , T stg
T Jmax
V CEO
V CBO
V EBO
R JC
P D
I C
MRF8372R1, R2
CASE 751–05, STYLE 1
– 55 to +150
750 mW, 870 MHz
RF LOW POWER
Value
1.67
22.2
Max
200
150
4.0
TRANSISTOR
NPN SILICON
16
36
45
SORF (SO–8)
Order this document
MRF8372R1, R2
by MRF8372/D
mW/ C
mAdc
Watts
Unit
Unit
Vdc
Vdc
Vdc
C/W
C
C
1

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MRF8372R1 Summary of contents

Page 1

... NPN SILICON CASE 751–05, STYLE 1 SORF (SO–8) Symbol Value V CEO 16 V CBO 36 V EBO 4 200 P D 1.67 22 stg – +150 T Jmax 150 Symbol Max (Replaces MRF837/D) MRF8372R1 MRF8372/D Unit Vdc Vdc Vdc mAdc Watts mW Unit C/W 1 ...

Page 2

... mAdc Vdc) DYNAMIC CHARACTERISTICS Output Capacitance ( Vdc 1.0 MHz) FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain ( 12.5 Vdc, P out = 0. 870 MHz) Collector Efficiency ( 12.5 Vdc, P out = 0. 870 MHz) MRF8372R1 Symbol Min Typ V (BR)CEO 16 — V (BR)CES 36 — ...

Page 3

... Z5 — 0.30 x 0.078 Microstrip Ohms Z6 — 1.63 x 0.078 Microstrip Ohms PCB — 1/32 Glass Teflon 2.56 800/900 MHz BAND DATA P out = 750 12.5 Vdc IRL 820 840 860 880 f, FREQUENCY (MHz – 900 MRF8372R1 ...

Page 4

... COLLECTOR VOLTAGE (Vdc) Figure 5. Output Power versus Collector Voltage MRF8372R1 12 7 out = 806 MHz = 820 mW P out = 870 MHz = 635 mW P out = 960 MHz = 530 100 mW 4.0 + j1.2 24.7 – j19.2 6.0 + j1.9 36.9 – j20.5 6.1 + j2.5 39.3 – ...

Page 5

... 12.5 Vdc f = 512 MHz 300 14 16 400 420 Figure 10. Output Power versus Frequency 7.5 Vdc 440 460 480 500 520 f, FREQUENCY (MHz 440 460 480 500 520 f, FREQUENCY (MHz) MRF8372R1 ...

Page 6

... P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609 – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MRF8372R1 PACKAGE DIMENSIONS C ...

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