mbn600gr HITACHI, mbn600gr Datasheet - Page 2

• Manufacturer Part Number: mbn600gr
• Description: Hitachi Igbt Module / Silicon N-channel Igbt
• Manufacturer: HITACHI

1200
1000
Collector to Emitter voltage vs. Gate to Emitter voltage
800
600
400
200
20
15
10
10
0
5
0
8
6
4
2
0
0
0
0
Collector current vs. Collector to Emitter voltage
Tc 25 C
Tc 25 C
Vcc 600V
Ic 600A
Tc 25 C
1200
Collector to Emitter Voltage, V
V
Gate charge characteristics
Gate to Emitter Voltage, V
2
GE
5
15V 14V13V12V
Gate Charge, Q
2400
4
10
3600
G
6
(nC)
Pc 3790W
GE
15
4800
CE
Ic 1200A
Ic 600A
(V)
TYPICAL
8
TYPICAL
(V)
TYPICAL
6000
20
10
11V
10V
9V
1200
1000
1200
1000
800
600
400
200
800
600
400
200
Collector to Emitter voltage vs. Gate to Emitter voltage
10
0
0
0
8
6
4
2
0
Collector current vs. Collector to Emitter voltage
0
0
0
V
Tc 25 C
Tc 125 C
Tc 125 C
Tc 125 C
GE
Forward voltage of free-wheeling diode
0V
V
GE
Collector to Emitter Voltage, V
Gate to Emitter Voltage, V
1
2
15V 14V13V12V
5
Forward Voltage, V
2
4
10
3
6
F
(V)
GE
15
CE
(V)
4
Ic 1200A
Ic 600A
8
TYPICAL
TYPICAL
PDE-N600GR12A-0
(V)
TYPICAL
20
5
10
11V
10V
9V