mbn600gr HITACHI, mbn600gr Datasheet - Page 3

• Manufacturer Part Number: mbn600gr
• Description: Hitachi Igbt Module / Silicon N-channel Igbt
• Manufacturer: HITACHI

10000
1000
160
140
120
100
100
1.5
0.5
80
60
40
20
10
1
0
0
1
0
0
0
V
V
R
T
Inductive Load
Vcc 600V
V
R
T
Inductive Load
V
R
T
C
CC
GE
G
C
GE
GE
C
G
G
Switching time vs. Collector current
100
125 C
25 C
2.2
100
Switching loss vs. Collector current
125 C
200
2.2
2.2
600V
Reverse biased safe operating area
15V
15V
15V
Collector to Emitter Voltage, V
200
Collector Current, I
400
200
Collector Current. I
300
600
300
400
800
400
500
C
1000
C
(A)
500
(A)
600
ton
tr
tf
toff
1200
CE
TYPICAL
TYPICAL
700
600
(V)
Eton
Etoff
Err
1400
800
700
0.001
1000
0.01
100
0.1
0.1
0.1
10
10
1
1
0.001
1
1
V
V
I
T
Inductive Load
C
C
CC
GE
600A
25 C
600V
15V
Switching time vs. Gate resistance
Switching loss vs. Gate resistance
Transient thermal impedance
0.01
Gate Resistance, R
Gate Resistance. R
Time, t (s)
0.1
10
10
Etoff
Eton
Err
toff
ton
tr
tf
G
V
V
I
T
Inductive Load
G
C
C
CC
GE
( )
( )
600A
1
125 C
600V
15V
PDE-N600GR12A-0
TYPICAL
TYPICAL
Diode
IGBT
100
10
100