adl-80y01tx Roithner LaserTechnik GmbH, adl-80y01tx Datasheet

no-image

adl-80y01tx

Manufacturer Part Number
adl-80y01tx
Description
Infrared Laser Diodes
Manufacturer
Roithner LaserTechnik GmbH
Datasheet
AlGaAs
2004/05 ver. 1.0
★ 808nm 200mW 5.6
• Electrical and optical characteristics (T
Peak wavelength
Threshold current
Operating current
Operating voltage
Differential efficiency
Parallel divergence angle
Perpendicular divergence angle
Emission point accuracy
1. Do not operate the device above the maximum rating condition, even momentarily. It may cause unexpected permanent damage to the device.
2. Semiconductor laser device is very sensitive to electrostatic discharge. High voltage spike current may change the characteristics of the device, or malfunction at any time during
3. Effective heat sink can help the device operates under a more relax condition; as a result, a more stable characteristics and better reliability can be achieved. So it is
4. Do not look into the laser beam directly by bare eyes. The laser beam may cause severe damage to human eyes.
Features
Applications
Absolute maximum ratings
Light output power
Reverse voltage (LD)
Case temperature
Storage temperature
Precautions
its service period. Therefore, proper measures for preventing electrostatic discharge are strongly recommended.
recommended that always apply proper heat sink before the device is operating.
1. Standard 5.6φTO-type: easy for design, assembly and integration
2. Low operation current
3. Long operation lifetime, MTTF>10000 hrs
4. Cost effective
1. Pumps for solid state lasers
2. Miniature low power green laser
3. Medical use
High Power Laser Diode
Parameter
Parameter
Invisible Laser Diode
Symbol Condition
V
P
T
T
RL
O
C
S
φ
TO-Type
Δ x Δ y Δ z
Symbol
CW
-
-
-
θ
V
θ
λ
I
η
I
op
th
op
//
-10~+50
-40~+75
Rating
c
200
=25
Min.
805
2
0.8
-
-
-
-
-
-
o
C)
Unit
mW
o
o
V
Typ.
C
C
808
260
1.7
55
41
1
9
-
ADL-80Y01TX/TZ
Max.
280
811
± 80
1.9
75
15
48
-
mW/mA
degree
degree
TX
Unit
mA
mA
nm
um
V
P
Conditions
o
P
P
P
=150-200mW
P
o
o
o
o
=200mW
=200mW
=200mW
=200mW
TZ

Related parts for adl-80y01tx

adl-80y01tx Summary of contents

Page 1

... -10~+ -40~+75 = Symbol Min. Typ. λ 805 η 0.8 θ θ - ⊥ Δ x Δ y Δ ADL-80Y01TX/ Max. Unit 808 811 260 280 mA 1.7 1 mW/ degree 41 48 degree ± Conditions P =200mW o P =200mW o P ...

Page 2

... Po = 200mW Po = 150mW Po = 100mW Po = 50mW 790 ADL-80Y01TX/TZ Threshold Current vs. Case Temperature Case Temperature (degree) Oscillation Wavelength vs. Case Temperature Case Temperature (degree) Power Dependence of Wavelength 795 800 805 810 815 820 Oscillation Wavelength (nm) ...

Related keywords