74HC2GU04GW,125 NXP Semiconductors, 74HC2GU04GW,125 Datasheet
74HC2GU04GW,125
Specifications of 74HC2GU04GW,125
74HC2GU04GW-G
935281027125
Related parts for 74HC2GU04GW,125
74HC2GU04GW,125 Summary of contents
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Dual unbuffered inverter Rev. 01 — 6 October 2006 1. General description The 74HC2GU04 is a high-speed Si-gate CMOS device. The 74HC2GU04 provides two unbuffered inverters. 2. Features I Wide supply voltage range from 2 6.0 V ...
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... NXP Semiconductors 5. Functional diagram mnb079 Fig 1. Logic symbol 6. Pinning information 6.1 Pinning Fig 4. Pin configuration 6.2 Pin description Table 3. Pin description Symbol Pin 1A 1 GND 74HC2GU04_1 Product data sheet mnb080 Fig 2. IEC logic symbol 74HC2GU04 GND 001aaf305 Description data input ...
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... NXP Semiconductors 7. Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level. 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC I input clamping current ...
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... NXP Semiconductors 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter amb V HIGH-level input voltage IH V LOW-level input voltage IL V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I supply current ...
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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V LOW-level output voltage OL I input leakage current I I supply current +125 C amb V HIGH-level input voltage IH V LOW-level input voltage IL V HIGH-level output voltage OH V LOW-level output voltage ...
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... NXP Semiconductors 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter t propagation delay pd t transition time t C power dissipation capacitance the same as t and t pd PLH PHL [ the same as t and t t TLH ...
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... NXP Semiconductors Table 9. Measurement points Input 0.5V GND GENERATOR Test data is given in Table 10. Definitions test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to output impedance Z T Fig 6. Load circuitry for switching times Table 10. ...
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... NXP Semiconductors amb Fig 8. Typical forward transconductance as a function of supply voltage 14. Typical transfer characteristics 150 120 0.4 0 Fig 9. Typical transfer characteristics V 74HC2GU04_1 Product data sheet (mA/ mnb121 (mA) O (V) 1.6 1.2 0.8 0 2.0 V Fig 10. Typical transfer characteristics V CC Rev. 01 — 6 October 2006 ...
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... NXP Semiconductors Fig 11. Typical transfer characteristics V 15. Application information Some applications for the 74HC2GU04 are: • Linear amplifier (see • Crystal oscillator (see Remark: All values given are typical values unless otherwise specified. Fig 12. Linear amplifier application 74HC2GU04_1 ...
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... NXP Semiconductors Test data is given in Table pF pF optimum value depends on the frequency and required stability against changes 3.0 V and MHz Fig 13. Crystal oscillator application Table 11. External components for resonator (f < 1 MHz) Frequency R1 10 kHz to 15.9 kHz 2 kHz to 24.9 kHz 2 kHz to 54.9 kHz 2 ...
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... NXP Semiconductors 16. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 Fig 14. Package outline SOT363 (SC-88) 74HC2GU04_1 Product data sheet scale 2.2 1.35 2 ...
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... NXP Semiconductors Plastic surface-mounted package (TSOP6); 6 leads y 6 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT 0.1 0.40 1.1 0.26 mm 0.013 0.25 0.9 0.10 OUTLINE VERSION IEC SOT457 Fig 15. Package outline SOT457 (SC-74) 74HC2GU04_1 Product data sheet scale 3.1 1.7 3 ...
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... NXP Semiconductors 17. Abbreviations Table 13. Abbreviations Acronym Description CMOS Complementary Metal Oxide Semiconductor ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model DUT Device Under Test 18. Revision history Table 14. Revision history Document ID Release date 74HC2GU04_1 20061006 74HC2GU04_1 Product data sheet Data sheet status ...
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... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...
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... NXP Semiconductors 21. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 Functional description . . . . . . . . . . . . . . . . . . . 3 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 13 Additional characteristics . . . . . . . . . . . . . . . . . 7 14 Typical transfer characteristics ...