hmc278ms8g Hittite Microwave Corporation, hmc278ms8g Datasheet

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hmc278ms8g

Manufacturer Part Number
hmc278ms8g
Description
100 Mw Medium Power Gaas Ic Amplifier 1.7 - 3.0 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet
1
Features
P1dB OUTPUT POWER: + 20 dBm
SINGLE SUPPLY: +3V to +5V
ULTRA SMALL 8 LEAD MSOP PACKAGE
IDEAL FOR PCS/3G, MMDS, HomeRF,
& BLUETOOTH
Guaranteed Performance,
MICROWAVE CORPORATION
F
12 Elizabeth Drive, Chelmsford, MA 01824
1 - 36
EBRUARY
Frequency Range
Input Return Loss
Reverse Isolation
Gain
Gain Flatness ( Over Any 200 MHz BW)
Output Return Loss
Output Power for 1dB Compression
(P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Voltage (Vdd)
Supply Current (Idd)
2001
100 mW MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz
Parameter
Min.
4.75
46
15
14
16
26
6
5
Phone: 978-250-3343
Vdd= +5V
1.7 - 3.0
± 0.7
Typ.
130
5.0
20
10
10
52
19
32
21
As a Function of Vdd, -40 to +85 deg C
6
Max.
5.25
165
25
General Description
The HMC278MS8G is a 100mW GaAs MMIC
medium power amplifier covering 1.7 to 3 GHz.
The device is packaged in a low cost, surface
mount 8 lead MSOP plastic package with an
exposed base paddle for improved RF ground
and thermal dissipation. The self-biased ampli-
fier provides 21 dB of gain and +20 dBm P1dB
output power while operating from a single posi-
tive supply of Vdd= +5V @ 130 mA. At Vdd =
+3V the gain is 19 dB with a P1dB of +16dBm.
With RF I/Os matched to 50 , external compo-
nent requirements are minimal. At a height of
0.040” (1.0mm), the MSOP8 package is ideal for
low profile portable wireless devices. Use the
HMC278MS8G with the HMC309MS8 integrated
LNA/TxRx switch front-end for BLUETOOTH
Class I, HomeRF, 802.11 WLAN, and ISM 2.4
GHz radios.
HMC278MS8G
Min.
4.75
48
17
19
29
16
7
7
Vdd= +5V
Fax: 978-250-3373
2.3 - 2.5
± 0.5
Typ.
130
5.0
10
10
52
20
22
32
21
6
Max.
5.25
165
25
Min.
2.75
48
28
15
13
15
7
7
Vdd= +3V
Web Site: www.hittite.com
2.3 - 2.5
± 0.5
Typ.
125
3.0
32
19
10
10
52
16
18
6
Max.
3.25
140
23
V
01.1200
Units
dBm
dBm
dBm
GHz
Vdc
mA
dB
dB
dB
dB
dB
dB

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hmc278ms8g Summary of contents

Page 1

... Supply Current (Idd) 12 Elizabeth Drive, Chelmsford, MA 01824 HMC278MS8G General Description The HMC278MS8G is a 100mW GaAs MMIC medium power amplifier covering 1 GHz. The device is packaged in a low cost, surface mount 8 lead MSOP plastic package with an exposed base paddle for improved RF ground and thermal dissipation ...

Page 2

... Phone: 978-250-3343 Fax: 978-250-3373 HMC278MS8G F 2001 EBRUARY ...

Page 3

... All levels in dBm Phone: 978-250-3343 Fax: 978-250-3373 HMC278MS8G 01.1200 ...

Page 4

... C 27.8 27.8 25.7 o +25 C 27.7 27.5 25.5 + 27.3 26.9 24.6 Phone: 978-250-3343 Fax: 978-250-3373 HMC278MS8G F 2001 EBRUARY ...

Page 5

... Storage Temperature Operating Temperature Note: 100pF bypass capacitor to ground on Vdd line recommended. IN GND 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15 MM PER SIDE 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25 MM PER SIDE Phone: 978-250-3343 Fax: 978-250-3373 HMC278MS8G 01.1200 V +8 Vdc 175 C/W -65 to +150 o ...

Page 6

... MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz 01.1200 V Recommended PCB Layout for HMC278MS8G The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown above ...

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