edd51323dbh-ls Elpida Memory, Inc., edd51323dbh-ls Datasheet - Page 13
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edd51323dbh-ls
Manufacturer Part Number
edd51323dbh-ls
Description
512m Bits Ddr Mobile Ram
Manufacturer
Elpida Memory, Inc.
Datasheet
1.EDD51323DBH-LS.pdf
(59 pages)
- Current page: 13 of 59
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CKE (input pin)
CKE controls power-down mode, self-refresh function and deep power-down function with other command inputs.
The CKE level must be kept for 2 clocks at least, that is, if CKE changes at the cross point of the CK rising edge and
the /CK falling edge with proper setup time tIS, by the next CK rising edge CKE level must be kept with proper hold
time tIH.
DQ0 to DQ31 (input/output pins)
Data are input to and output from these pins.
DQS0 to DQS3 (input and output pin): DQS provides the read data strobes (as output) and the write data strobes
(as input). Each DQS pin corresponds to eight DQ pins, respectively (See DQS and DM Correspondence Table).
DM0 to DM3 (input pin)
DM is the reference signals of the data input mask function. DM is sampled at the cross point of DQS and VDDQ/2.
When DM = high, the data input at the same timing are masked while the internal burst counter will be counting up.
Each DM pin corresponds to eight DQ pins, respectively (See DQS and DM Correspondence Table).
[DQS and DM Correspondence Table]
VDD, VSS, VDDQ, VSSQ (Power supply)
VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output
buffers. VDD must be equal to VDDQ.
Preliminary Data Sheet E1432E11 (Ver. 1.1)
Part number
EDD51323DBH
Organization
32 bits
DQS0
DQS1
DQS2
DQS3
DQS
13
Data mask
DM0
DM1
DM2
DM3
EDD51323DBH-LS
DQs
DQ0 to DQ7
DQ8 to DQ15
DQ16 to DQ23
DQ24 to DQ31
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