apm4550j Anpec Electronics Corporation, apm4550j Datasheet - Page 3

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apm4550j

Manufacturer Part Number
apm4550j
Description
Dual Enhancement Mode Mosfet N- And P-channel
Manufacturer
Anpec Electronics Corporation
Datasheet
APM4550J
Electrical Characteristics (Cont.)
Notes:
Copyright
Rev. A.1 - May, 2007
Diode Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Symbol
t
t
V
d(OFF)
C
C
C
d(ON)
Q
R
Q
Q
T
T
Q
t
SD
oss
rr
rss
iss
a : Pulse test ; pulse width 300 s, duty cycle
b : Guaranteed by design, not subject to production testing.
G
rr
r
gd
f
gs
g
a
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery
Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ANPEC Electronics Corp.
Parameter
b
b
V
N-Channel
V
V
Frequency=1.0MHz
P-Channel
V
V
Frequency=1.0MHz
N-Channel
V
I
R
P-Channel
V
I
R
N-Channel
V
I
P-Channel
V
I
I
I
N-Channel
I
N-Channel
I
DS
DS
DS
DS
SD
SD
SD
SD
GS
GS
DS
GS
DS
DD
DD
DS
DS
G
G
=1A, V
=6
=-1A, V
=6
=8A
=-7A
=2.5A, V
=-2A, V
=8A, dl
=-7A, dl
=15V,
=-15V,
=15V, V
=-15V, V
=0V,V
=0V,
=0V,
=15V, R
=-15V, R
GEN
DS
SD
Test Condition
GEN
GS
SD
GS
GS
=0V,F=1MHz
L
2
/dt=100A/ s
GS
=0V
/dt=100A/ s
=15 ,
=10V,
L
=15 ,
=-10V,
=0V
=10V,
=-10V,
3
(T
A
= 25 C unless otherwise noted)
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
APM4550J
-0.8
620
600
100
0.8
8.3
1.3
1.1
3.2
2.8
Typ.
16
15
90
70
75
10
12
22
27
14
14
12
9
6
2
6
8
3
www.anpec.com.tw
Max.
-1.3
1.3
11
14
18
22
40
50
25
19
16
6
Unit
nC
nC
pF
ns
ns
V

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