NTR4101PT1 ONSEMI [ON Semiconductor], NTR4101PT1 Datasheet

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NTR4101PT1

Manufacturer Part Number
NTR4101PT1
Description
Trench Power MOSFET -20 V, Single P-Channel, SOT-23
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

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NTR4101P
Trench Power MOSFET
−20 V, Single P−Channel, SOT−23
Features
Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
MAXIMUM RATINGS
October, 2004 − Rev. 3
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
ESD Capability (Note 3)
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t < 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)
Leading −20 V Trench for Low R
−1.8 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint
Pb−Free Package is Available
Load/Power Management for Portables
Load/Power Management for Computing
Charging Circuits and Battery Protection
Semiconductor Components Industries, LLC, 2004
(Cu area = 1.127 in sq [1 oz] including traces)
Parameter
Parameter
(T
J
Steady
State
State
t
Steady
State
t
Steady
State
State
= 25 C unless otherwise noted)
10 s
10 s
RS = 1500 W
C = 100 pF,
tp = 10 ms
T
T
T
T
T
T
T
A
A
A
A
A
A
A
DS(on)
= 25 C
= 85 C
= 25 C
= 25 C
= 25 C
= 85 C
= 25 C
Symbol
Symbol
V
T
ESD
V
R
R
R
I
P
P
T
STG
T
DSS
DM
I
I
I
GS
D
D
S
qJA
qJA
qJA
J
D
D
L
,
−55 to
Value
−2.4
−1.7
−3.2
0.73
1.25
−1.8
−1.3
0.42
−7.5
−2.4
Max
−20
225
150
260
170
100
300
8.0
1
Unit
Unit
C/W
W
W
V
V
A
A
A
V
A
C
C
†For information on tape and reel specifications,
NTR4101PT1
NTR4101PT1G
V
1
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(BR)DSS
−20 V
CASE 318
STYLE 21
Device
SOT−23
2
ORDERING INFORMATION
G
3
http://onsemi.com
P−Channel MOSFET
112 mW @ −1.8 V
TR4
W
70 mW @ −4.5 V
90 mW @ −2.5 V
R
DS(ON)
Package
Pb−Free
SOT−23
SOT−23
MARKING DIAGRAM &
= Device Code
= Work Week
Publication Order Number:
PIN ASSIGNMENT
TYP
S
D
Gate
1
3000/Tape & Reel
3000/Tape & Reel
Drain
TR4
Shipping
W
3
NTR4101P/D
Source
I
D
−3.2 A
MAX
2

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NTR4101PT1 Summary of contents

Page 1

... STG STYLE 21 I −2 260 C L Device NTR4101PT1 Symbol Max Unit NTR4101PT1G R 170 C/W qJA R 100 qJA †For information on tape and reel specifications, R 300 qJA including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 4) = −250 mA Zero Gate Voltage Drain Current (Note − Gate−to−Source Leakage Current ...

Page 3

TYPICAL PERFORMANCE CURVES −10 V − −2 −2 −2 −1 −1 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. ...

Page 4

TYPICAL PERFORMANCE CURVES 1000 800 C iss 600 400 C 200 oss C rss −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 7. Capacitance Variation 1000 V = ...

Page 5

PACKAGE DIMENSIONS SOT−23 (TO−236 SOLDERING FOOTPRINT* 0.95 0.037 0.9 0.035 0.8 0.031 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor ...

Page 6

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for ...

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