NTD3055L104T4 ONSEMI [ON Semiconductor], NTD3055L104T4 Datasheet

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NTD3055L104T4

Manufacturer Part Number
NTD3055L104T4
Description
Power MOSFET
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

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NTD3055L104
Power MOSFET
12 Amps, 60 Volts, Logic Level
N−Channel DPAK
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
1. When surface mounted to an FR4 board using 1 pad size,
2. When surface mounted to an FR4 board using the minimum recommended
MAXIMUM RATINGS
August, 2004 − Rev. 4
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage, Continuous
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance, − Junction−to−Case
Maximum Lead Temperature for Soldering
Designed for low voltage, high speed switching applications in
Bridge Circuits
Pb−Free Packages are Available
Lower R
Lower V
Tighter V
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Power Supplies
Converters
Power Motor Controls
Semiconductor Components Industries, LLC, 2004
(Cu Area 1.127 in
pad size, (Cu Area 0.412 in
Derate above 25 C
Energy − Starting T
(V
I
Purposes, 1/8 from case for 10 seconds
L(pk)
DD
− Non−Repetitive (t
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
− Continuous @ T
− Continuous @ T
− Single Pulse (t
= 11 A, V
= 25 Vdc, V
DS(on)
DS(on)
SD
Specification
DS
2
Rating
GS
).
= 60 Vdc)
J
p
= 5.0 Vdc, L = 1.0 mH
(T
= 25 C
v10 ms)
A
A
p
J
GS
v10 ms)
= 25 C
= 100 C
= 25 C unless otherwise noted)
A
A
A
2
= 10 MW)
).
= 25 C
= 25 C (Note 1)
= 25 C (Note 2)
Symbol
T
V
V
R
R
R
J
V
V
E
I
P
DGR
, T
T
DSS
DM
I
I
qJC
qJA
qJA
GS
GS
D
D
AS
D
L
stg
−55 to
Value
+175
"15
"20
0.32
3.13
71.4
100
260
2.1
1.5
60
60
12
10
45
48
61
1
W/ C
Unit
Vdc
Vdc
Vdc
Adc
Apk
C/W
mJ
W
W
W
C
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1 2
1
V
2
(BR)DSS
60 V
3
3
55L104
A
Y
W
ORDERING INFORMATION
4
4
G
http://onsemi.com
CASE 369C
CASE 369D
STYLE 2
STYLE 2
DPAK−3
DPAK
R
= Device Code
= Assembly Location
= Year
= Work Week
N−Channel
DS(on)
104 mW
D
Publication Order Number:
TYP
S
Gate
Gate
DIAGRAMS
MARKING
1
1
NTD3055L104/D
Drain
Drain
Drain
Drain
4
4
2
2
I
D
12 A
3
Source
3
Source
MAX

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NTD3055L104T4 Summary of contents

Page 1

NTD3055L104 Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Pb−Free Packages are Available Lower R DS(on) Lower V ...

Page 2

... Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTD3055L104 NTD3055L104G NTD3055L104−1 NTD3055L104−1G NTD3055L104T4 NTD3055L104T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD3055L104 ( unless otherwise noted Vdc ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...

Page 6

SINGLE PULSE 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated ...

Page 7

0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering ...

Page 8

−T− SEATING K PLANE 0.13 (0.005) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without ...

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