NTF3055L175T3LFG ONSEMI [ON Semiconductor], NTF3055L175T3LFG Datasheet

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NTF3055L175T3LFG

Manufacturer Part Number
NTF3055L175T3LFG
Description
Power MOSFET 2.0 A, 60 V, Logic Level
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
NTF3055L175
Power MOSFET
2.0 A, 60 V, Logic Level
N−Channel SOT−223
power supplies, converters and power motor controls and bridge
circuits.
Features
Applications
1. When surface mounted to an FR4 board using 1 pad size, 1 oz. (Cu. Area
2. When surface mounted to an FR4 board using minimum recommended pad
February, 2004 − Rev. 2
MAXIMUM RATINGS
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
Designed for low voltage, high speed switching applications in
Pb−Free Packages are Available
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Semiconductor Components Industries, LLC, 2004
0.995 in
size, 2−2.4 oz. (Cu. Area 0.272 in
− Continuous
− Non−repetitive (t
− Continuous @ T
− Continuous @ T
− Single Pulse (t
Derate above 25 C
Energy − Starting T
(V
I
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Purposes, 1/8 from case for 10 seconds
L(pk)
DD
= 3.6 A, L = 10 mH, V
= 25 Vdc, V
2
).
p
Rating
GS
A
A
p
J
= 25 C
= 100 C
10 ms)
= 5.0 Vdc,
= 25 C
(T
10 ms)
GS
C
= 25 C unless otherwise noted)
A
A
Preferred Device
= 1.0 MW)
DS
= 25 C (Note 1)
= 25 C (Note 2)
= 60 Vdc)
2
).
Symbol
T
V
V
R
R
J
V
E
I
P
DGR
, T
T
DSS
DM
I
I
qJA
qJA
GS
D
D
AS
D
L
stg
to 175
Value
0.014
72.3
−55
260
114
2.0
1.2
6.0
2.1
1.3
60
60
65
15
20
1
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
W
W
C
C
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future
use and best overall value.
5L175
L
WW
1
ORDERING INFORMATION
2
= Device Code
= Location Code
= Work Week
R
MARKING DIAGRAM
G
3
DS(on)
http://onsemi.com
PIN ASSIGNMENT
Gate
2.0 A, 60 V
1
4
N−Channel
Drain
4
2
= 175 mW
D
Publication Order Number:
Drain
S
3
Source
CASE 318E
SOT−223
STYLE 3
NTF3055L175/D
5L175
LWW

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