chip1310 Roithner LaserTechnik GmbH, chip1310 Datasheet

chip1310

Manufacturer Part Number

chip1310

Description

Visible Laser Diodes

Manufacturer

Roithner LaserTechnik GmbH

Datasheet

1.CHIP1310.pdf (1 pages)

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CHIP 1310L

Structure: index guided, single transverse mode

Lasing wavelength: 1310 nm typ.

Max. optical power: 5 mW typ.

Chipsize: 300 x 300 x 100 µm [L x W x H] +/- 20 µm

Cavity length: 300 µm +/- 5 µm

Emitting Point Height: 1.6 - 1.8 µm from P-side

Coating: Au coated on upper and lower side n-side: 4000Å, p-side: 4000Å

Low threshold current, low operating current, low noise

Optical Output Power

LD Reverse Voltage

Operation Temperature

Storage Temperature

Optical Output Power

Emitting Aperture

Threshold Current

Operation Current

Operating Voltage

Lasing Wavelength

Beam Divergence

CHARACTERISTIC

Absolute Maximum Ratings (Tc=25°C)

Optical-Electrical Characteristics (Tc = 25°C)

Infrared Wavelength Laserdiodechip

CHARACTERISTIC

ROITHNER LASERTECHNIK

e-mail: rlt@mcb.at, http://www.roithner.mcb.at

TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43

A-1040 WIEN, FLEISCHMANNGASSE 9

SYMBOL TEST CONDITION

TECHNICAL DATA

SYMBOL

R(LD)

STG

kink free

= 5 mW

-10 .. +50

-40 .. +85

RATING

1280

MIN

1310

1 x 2

TYP

1.2

MAX

1340

UNIT

°C

UNIT

µm²

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