RT1P430C ISAHAYA [Isahaya Electronics Corporation], RT1P430C Datasheet - Page 2
RT1P430C
Manufacturer Part Number
RT1P430C
Description
Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type
Manufacturer
ISAHAYA [Isahaya Electronics Corporation]
Datasheet
1.RT1P430C.pdf
(3 pages)
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V
SYMBOL
V
T s t g
( B R ) C E O
I
V
V
V
C E ( s a t )
I
h
R
I
T j
P
C B O
f
-0.1
-1000
-10
C M
C B O
E B O
C E O
-100
C
F E
T
-1
1
C
-10
-0.1
-0
V
V
CE
CE
-0.2 -0.4 -0.6 -0.8
=-0.2V
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
=-5V
Input on voltage-Collector CUrrent
Collector Current-Input off voltage
PARAMETER
PARAMETER
Collector CUrrent Ic (mA)
Input off voltage VI(OFF) (V)
-1
-1
ISAHAYA ELECTRONICS CORPORATION
-1.2 -1.4 -1.6 -1.8
-10
R T 1 P4 3 0 X SERIES
I
V
V
I
V
C
C
-55∼+150
RT1P430U
CB
CE
CE
=-100μA,R
=-5V,I
=-10mA,I
=-6V,I
=-50V,I
+150
150
-100
-2
C
E
E
=10mA
=-1mA
B
=0
TEST CONDITION
BE
RT1P430M
=-0.5mA
=∞
1000
100
10
-0.1
RATING
V
-100
-200
200
CE
-50
-50
-6
=-5V
DC forward current gain -Collector CUrrent
RT1P430C
-55∼+150
+150
Collector CUrrent Ic(mA)
-1
RT1P430S
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
450
MIN
-50
100
3.3
-10
LIMIT
UNIT
TYP
150
mA
mA
4.7
℃
℃
V
V
V
mW
-100
MAX
-0.1
-0.3
6.1
UNIT
MHz
μA
kΩ
−
V
V