NTB25P06T4 ONSEMI [ON Semiconductor], NTB25P06T4 Datasheet
NTB25P06T4
Manufacturer Part Number
NTB25P06T4
Description
Power MOSFET -60 V, -27.5 A, P-Channel D2PAK
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.NTB25P06T4.pdf
(6 pages)
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Quantity:
30 000
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Part Number:
NTB25P06T4G
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Part Number:
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NTB25P06
Power MOSFET
−60 V, −27.5 A, P−Channel D
withstand high energy in the avalanche and commutation modes.
Features
Typical Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1 pad size
2. When surface mounted to an FR4 board using the minimum recommended
MAXIMUM RATINGS
August, 2004 − Rev. 2
Maximum Lead Temperature for Soldering
Purposes, (1/8 from case for 10 s)
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Operating and Storage
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Designed for low voltage, high speed switching applications and to
Pb−Free Packages are Available
PWM Motor Controls
Power Supplies
Converters
Bridge Circuits
Semiconductor Components Industries, LLC, 2004
(Cu Area 1.127 in
pad size (Cu Area 0.412 in
Temperature Range
Energy − Starting T
(V
I
L(pk)
DD
− Continuous
− Non−Repetitive (t
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
− Continuous @ T
− Single Pulse (t
= 25 V, V
= 20 A, L = 3 mH, R
GS
Rating
2
).
= 10 V,
J
p
(T
= 25 C
v10 ms)
A
p
J
v10 ms)
= 25 C
= 25 C unless otherwise noted)
G
2
A
).
= 25 W)
= 25 C
Symbol
T
V
V
R
R
R
J
V
2
E
I
P
GSM
, T
T
DSS
DM
I
qJC
qJA
qJA
GS
AS
PAK
D
D
L
stg
−55 to
Value
+175
"15
"20
27.5
1.25
46.8
63.2
−60
120
600
260
80
1
Unit
Vpk
Apk
C/W
mJ
W
V
V
A
C
C
†For information on tape and reel specifications,
NTB25P06
NTB25P06G
NTB25P06T4
NTB25P06T4G
1
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
CASE 418B
(BR)DSS
−60 V
Device
STYLE 2
3
2
D
2
PAK
NTB25P06 = Device Code
Y
WW
ORDERING INFORMATION
G
http://onsemi.com
4
65 mW @ −10 V
R
(Pb−Free)
(Pb−Free)
Package
DS(on)
D
D
D
D
P−Channel
2
2
2
2
= Year
= Work Week
PAK
PAK
PAK
PAK
D
Publication Order Number:
MARKING DIAGRAM
& PIN ASSIGNMENT
TYP
S
Gate
NTB25P06
YWW
800/Tape & Reel
800/Tape & Reel
Drain
Drain
50 Units/Rail
50 Units/Rail
Shipping
NTB25P06/D
I
−27.5 A
D
Source
MAX
†
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NTB25P06T4 Summary of contents
Page 1
... R 46.8 qJA R 63.2 qJA T 260 C L Device NTB25P06 NTB25P06G NTB25P06T4 NTB25P06T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DS(on −10 V −27.5 A P−Channel ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) = −250 mA (Positive Temperature Coefficient) Zero Gate Voltage Drain Current ( − ...
Page 3
V = − −8 V − −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0 − ...
Page 4
2500 C iss 2000 C rss 1500 1000 500 C 0 −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation ...
Page 5
−T− SEATING PLANE 0.13 (0.005) M VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering ...
Page 6
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for ...