ktc3551t Korea Electronics (KEC GROUP), ktc3551t Datasheet

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ktc3551t

Manufacturer Part Number

ktc3551t

Description

Epitaxial Planar Npn Transistor

Manufacturer

Korea Electronics (KEC GROUP)

Datasheet

1.KTC3551T.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

ktc3551t-RTK/P

Manufacturer:

INFINEON

Quantity:

201

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

ktc3551t-RTK/PW

Manufacturer:

EON

Quantity:

92 634

Current page: 1 of 3
Download datasheet (90Kb)

2001. 6. 28

RELAY DRIVERS, LAMP DRIVERS,

MOTOR DRIVERS APPLICATION.

FEATURES

MAXIMUM RATING (Ta=25 )

* Package mounted on a ceramic board (600

ELECTRICAL CHARACTERISTICS (Ta=25 )

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Collector Cut-off Current

Emitter Cut-off Current

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

Transition Frequency

Collector Output Capacitance

Switching

Time

Adoption of MBIT Processes.

Large Current Capacitance.

Low Collector-to-Emitter Saturation Voltage.

High-Speed Switching.

Ultrasmall Package Facilitates Miniaturization in end Products.

High Allowable Power Dis sipation.

Complementary to KTA1551T.

CHARACTERISTIC

CHARACTERISTIC

Turn-On Time

Storage Time

Fall Time

DC

Pulse

Revision No : 0

SEMICONDUCTOR

SYMBOL

TECHNICAL DATA

V

V

V

V

P

T

I

CBO

I

I

T

CEO

EBO

C

CES

CP

stg

C

B

j

*

SYMBOL

V

V

V

V

V

V

V

(BR)CBO

(BR)CEO

(BR)EBO

(BR)CES

I

CE(sat)1

CE(sat)2

I

BE(sat)

h

C

CBO

EBO

t

t

f

0.8 )

stg

t

on

FE

T

ob

f

-55 150

RATING

200

150

1.0

0.9

80

80

50

5

3

INPUT

V

V

I

I

I

I

I

I

I

V

V

V

C

C

C

E

C

C

C

CB

EB

=10 A, I

CE

CE

CB

=10 A, I

=100 A, V

=1mA, I

=500mA, I

=300mA, I

=500mA, I

=4V, I

=2V, I

=10V, I

=40V, I

=10V, f=1MHz

50

PW=20 s

DC 1%

< =

UNIT

mA

V

W

V

V

V

A

20I =-20I =I =500mA

C

B

C

V

R

C

E

=0

=0

=100mA

E

C

BE

=0

=0

TEST CONDITION

B1

=0

B

B

B

=300mA

BE

=10mA

=6mA

=10mA

=-5V

I

=0

B2

R

100 F

B

I

B1

B2 C

470 F

V

CC

EPITAXIAL PLANAR NPN TRANSISTOR

=25V

R

L

Type Name

OUTPUT

Marking

1. EMITTER

2. BASE

3. COLLECTOR

J

K

2

1

KTC3551T

MIN.

200

E

B

80

80

50

I

5

-

-

-

-

-

-

-

-

-

-

TSM

H K

3

J

TYP.

0.81

H

130

420

330

90

35

40

6

-

-

-

-

-

-

-

DIM

A

B

C

D

G

H

K

E

F

L

I

J

MAX.

190

135

560

0.1

0.1

1.2

-

-

-

-

-

-

-

-

-

MILLIMETERS

0.25+0.25/-0.15

1.6+0.2/-0.1

2.8+0.2/-0.3

Lot No.

0.70 0.05

0.16 0.05

0.00-0.10

2.9 0.2

0.4 0.1

1.9 0.2

0.95

0.60

0.55

+ _

+ _

+ _

+ _

+ _

UNIT

MHz

mV

mV

pF

nS

V

V

V

V

V

A

A

1/3

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