mbm300gr HITACHI, mbm300gr Datasheet - Page 2

• Manufacturer Part Number: mbm300gr
• Description: Hitachi Igbt Module / Silicon N-channel Igbt
• Manufacturer: HITACHI

Collector to Emitter voltage vs. Gate to Emitter voltage
600
500
400
300
200
100
20
15
10
10
0
5
0
8
6
4
2
0
0
0
0
Collector current vs. Collector to Emitter voltage
Tc 25 C
Tc 25 C
Vcc 600V
Ic 300A
Tc 25 C
V
Collector to Emitter Voltage, V
GE
400
Gate charge characteristics
Gate to Emitter Voltage, V
2
15V 14V13V12V
5
Gate Charge, Q
800
4
10
1200
G
6
(nC)
Pc 1980W
GE
15
1600
CE
Ic 600A
Ic 300A
(V)
TYPICAL
8
TYPICAL
(V)
TYPICAL
2000
20
10
11V
10V
9V
600
500
400
300
200
100
600
500
400
300
200
100
Collector to Emitter voltage vs. Gate to Emitter voltage
10
0
0
0
8
6
4
2
0
Collector current vs. Collector to Emitter voltage
0
0
0
V
Tc 25 C
Tc 125 C
Tc 125 C
Tc 125 C
GE
Forward voltage of free-wheeling diode
0V
V
Collector to Emitter Voltage, V
Gate to Emitter Voltage, V
GE
1
2
5
15V 14V13V12V
Forward Voltage, V
2
4
10
3
6
F
(V)
GE
15
CE
(V)
4
Ic 600A
Ic 300A
8
TYPICAL
TYPICAL
PDE-M300GR12A-0
(V)
TYPICAL
20
5
10
11V
10V
9V