CHA5293A-99F/00 UMS [United Monolithic Semiconductors], CHA5293A-99F/00 Datasheet

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CHA5293A-99F/00

Manufacturer Part Number
CHA5293A-99F/00
Description
17-24GHz High Power Amplifier
Manufacturer
UMS [United Monolithic Semiconductors]
Datasheet

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Part Number:
CHA5293A-99F/00
Manufacturer:
UMS
Quantity:
1 400
Description
The CHA5293a is a high gain three-stage
monolithic high power amplifier. It is designed for
a wide range of applications, from military to
commercial
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
■ Performances : 17-24GHz
■ 30dBm output power @ 1dB comp. gain
■ 17 dB
■ DC power consumption, 800mA @ 6V
■ Chip size :
Main Characteristics
Tamb. = 25°C
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Symbol
Ref. : DSCHA52932123 -03-May-02
P1dB
Fop
Id
G
1dB gain
4.01 x 2.52 x 0.05 mm
communication
Output power at 1dB gain compression
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
17-24GHz High Power Amplifier
Operating frequency range
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
Small signal gain
Parameter
Bias current
systems. The
1/7
-10
-15
-20
25
20
15
10
-5
5
0
12
Vg1,2 Vd2
Specifications subject to change without notice
Vd1 Vd2
14
Min
17
16
29
16
Typical on jig Measurements
18
Frequency (GHz)
Typ
800
17
30
S11
20
Vg3 Vd3
Vg3 Vd3
CHA5293a
S22
Max
24
22
24
Unit
dBm
GHz
mA
dB
26
28

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CHA5293A-99F/00 Summary of contents

Page 1

... High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5293a is a high gain three-stage monolithic high power amplifier designed for a wide range of applications, from military to commercial communication backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µ ...

Page 2

... CHA5293a Electrical Characteristics Tamb = +25° #800mA Symbol Fop Operating frequency range (1) G Small signal gain (1) Small signal gain flatness ( Reverse isolation P1dB Pulsed output power at 1dB compression (1) P03 Output power at 3dB gain compression (1) rd IP3 3 order intercept point (2) PAE Power added efficiency at 1dB comp ...

Page 3

... Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 S22 S11 Frequency (GHz) 18 GHz 20 GHz 24GHz Série2 Output Power (dBm) 3/7 Specifications subject to change without notice CHA5293a 1800 1700 1600 1500 1400 1300 1200 1100 1000 900 800 ...

Page 4

... CHA5293a (dBc C/I3 & IP3 versus total output power @ 18GHz (dBc C/I3 & ...

Page 5

... C/I3 & IP3 versus total output power @ 23.5GHz Ref. : DSCHA52932123 -03-May-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 IP3 (dBm) Output Power(dBm) IP3 (dBm) Output Power(dBm) 5/7 Specifications subject to change without notice CHA5293a F=21.5GHz F=10MHz F=23.5GHz F=10MHz ...

Page 6

... CHA5293a Chip Assembly and Mechanical Data To Vd1,Vd2 DC Drain supply feed To Vd3 DC Drain supply feed Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire prefered. ( Chip thickness : 50µm. All dimensions are in micrometers ) Ref. : DSCHA52932123 -03-May-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel ...

Page 7

... Ordering Information Chip form : CHA5293a-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...

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